Semiconductor device having silicide thin film and method of forming the same

Abstract

The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.

Description

[0001] This application is a Divisional of U.S. patent application Ser. No. 10 / 830,390, filed Apr. 21, 2004, now pending, which is a Divisional of U.S. patent application Ser. No. 10 / 100,929, filed Mar. 18, 2002, now issued U.S. Pat. No. 6,767,814, which claims the benefit of priority from Korean Patent Application No. 2001-14004, filed Mar. 19, 2001, all of which are herein incorporated by reference in their entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor device and method of forming the same, and more particularly to a semiconductor device having a silicide thin film and method of forming the same. [0004] 2. Description of the Related Art [0005] Silicon generally has the properties of semiconductor, but acts as a conductor when impurities are implanted into it, as is the case when used in a semiconductor device. In addition, silicon and metal can be easily transformed into a metal silicide having high co...

AI Technical Summary

Benefits of technology

This approach allows for the precise control of cobalt silicide layer thickness, reducing leakage currents and enhancing conductivity, thereby improving the reliability and performance of semiconductor devices without the spiking phenomenon.

Problems solved by technology

Consequently, various problems, such as a junction spiking phenomenon generating a leakage current, can occur.

Using this technique, it is difficult to control a speed of forming the cobalt silicide layer to form a thin layer.

The reliability of fabrication process is therefore deteriorated.

Thus, forming the cobalt silicide layer of less than 300 Å, as well as preventing the junction spiking phenomenon in the source / drain regions having the thin conjunction depth, is difficult.

When the signal current leaks into the substrate without being transmitted through channels, the consumption of the signal current is increased and the operation speed of transistors slows.

Worst yet, the transistors may not operate properly.

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