Method of manufacturing a semiconductor device

Abstract

In a method of manufacturing a semiconductor device, an insulating layer pattern defining at least one opening partially exposing a semiconductor substrate is formed on a semiconductor substrate including a single crystalline material. An amorphous thin layer is formed on the insulating layer pattern to fill up the opening. The amorphous thin layer is transformed into a single crystalline thin layer by providing the amorphous thin layer with a laser beam having sufficient energy to melt the amorphous thin layer. Here, the semiconductor substrate partially exposed through the opening is used as a seed. A gate pattern is formed on the single crystalline thin layer. Source / drain regions are formed at surface portions of the single crystalline thin layer adjacent to both sidewalls of the gate pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority under 35 USC §119 to Korean Patent Application No. 2006-90841, filed on Sep. 19, 2006, the contents of which are herein incorporated by reference in their entirety.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of manufacturing a semiconductor device capable of forming a unit device such as a metal oxide semiconductor field effect transistor (MOSFET) on a single crystalline thin layer formed on an insulating layer.[0004]2. Description of the Related Art[0005]Recently, semiconductor devices have been required to have a high integration degree and a high operation speed. A unit device such as a metal oxide semiconductor field effect transistor (MOSFET) may be formed on a bulk semiconductor substrate to manufacture the semiconductor device. However, when the MOSFET is formed ...

AI Technical Summary

Benefits of technology

The present invention provides a method of manufacturing a semiconductor substrate with an insulating layer pattern and a single crystalline thin layer sequentially formed by simple processes. This method can effectively form a unit device, such as a metal oxide semiconductor field effect transistor (MOSFET) on the single crystalline thin layer. The method involves forming an insulating layer pattern on the semiconductor substrate, filling the opening with an amorphous thin layer, and then transforming the amorphous thin layer into a single crystalline thin layer using a laser beam. The semiconductor substrate partially exposed through the opening acts as a seed for the transformation. This method has the advantage of applying techniques such as a silicon-on-insulator (SOI) process.

Problems solved by technology

However, the processes of manufacturing the semiconductor device using the techniques such as the SOI process are relatively complex.

In addition, a cost required for manufacturing the semiconductor device using the techniques such as the SOI process may be greater than a cost required for manufacturing the semiconductor device on the bulk semiconductor substrate.

Images