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Field Effect Transistor Based Sensor

a field effect transistor and sensor technology, applied in the field of field effect transistors based sensors, can solve the problems of unsatisfactory sensitivity and response time of algan/gan hemt-type isfet, unsuitable ph glass sensors, and prohibition from food and beverages

Active Publication Date: 2010-01-21
NATIONAL TSING HUA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The invention is about a new type of sensor that uses a special material called FET to detect and analyze substances in a sample. The sensor has a layer made of a material called InN or InGaN, which acts as a channel for electric current. When the sensor comes into contact with a specific substance, it detects a change in the current flow through the channel, which can be used to identify the substance. The first embodiment of the invention uses InN, while the second embodiment uses InGaN. The technical effect of this invention is to provide a more accurate and reliable method for detecting and analyzing substances using a FET based sensor."

Problems solved by technology

It is because that the traditional pH glass sensor is unsuitable and prohibited from the food and beverage.
However, the strength of the ion-sensing membrane of the pH ISFET is usually not enough.
However, the sensitivity and the response time of the AlGaN / GaN HEMT-type ISFET is not ideal.
It is not sensitive and fast enough to achieve the real-time detection and high sensitivity needed in modern sensor technologies.

Method used

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  • Field Effect Transistor Based Sensor
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Examples

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Embodiment Construction

[0021]Please refer to FIG. 2. FIG. 2 is a sectional view illustrating a FET based sensor 2 according to a first embodiment of the invention. As shown in FIG. 2, the FET based sensor 2 includes a substrate 20, an InN material layer 22, a source terminal 26 and a drain 28.

[0022]In practical applications, the substrate 20 can be made of, but not limited to, Si, GaN, AlN, sapphire or SiC.

[0023]The InN material layer 22 is formed over the substrate 20 and has an upper surface 220. In practical application, the FET based sensor 2 further includes a buffer layer 24. The buffer layer 24 is formed between the substrate 20 and the InN material layer 22, for assisting the epitaxy process of the InN material layer 22. In this embodiment, the buffer layer 24 can be made of AlN.

[0024]With the developing epitaxy technology, the unique optical and electrical characteristic of the InN material is recently figured out by researchers. For example, the intrinsic InN material has high free-electron conc...

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PUM

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Abstract

The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a field effect transistor (FET) based sensor. More particularly, the invention relates to a FET based sensor with high performance sensitivity and response time.[0003]2. Description of the Prior Art[0004]The ion-sensitive field effect transistor (ISFET) is an electrochemical sensing component disclosed by Piet Bergveld in 1970. The ISFET realizes the combination of minimization and automatic measuring. An ISFET is similar to a metal oxide semiconductor field effect transistor (MOSFET), but the ISFET does not have a conductive gate terminal. Instead, an ion-sensitive membrane is placed over the gate or channel region of the ISFET and is exposed to a sample solution. The wiring of the ISFET is not attached to the gate terminal like a MOSFET, but the wiring of the ISFET is attached to a reference electrode. The reference electrode is separated from the ion-sensitive membrane by the solution. The io...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/78
CPCG01N27/414
Inventor YEH, JER-LIANG ANDREWGWO, SHANGJR
Owner NATIONAL TSING HUA UNIVERSITY