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Aluminum oxide sintered body, method for producing the same and member for semiconductor producing apparatus

Active Publication Date: 2010-09-09
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014]The aluminum oxide sintered body of the invention has excellent corrosion resistance because it includes alumina as a primary component and a europium compound instead of a silicon compound and a titanium compound. Furthermore, the volume resistivity of the aluminum oxide sintered body calculated from a current value at 1 min after a voltage of 2 kV/mm is applied at room temperature can be readily controlled so as to be a value from a lower limit of a Johnson-Rahbek electrostatic chuck to a value of a Coulomb electrostatic chuck. As a result, a chucking force stronger than th

Problems solved by technology

However, the silicon compound and the titanium compound used in the Patent Documents 1 and 2 do not have sufficient corrosion resistance to a fluorine-based corrosive gas or plasma thereof, in particular; accordingly, the wafer may be contaminated with conductive particles thereof.
However, since the volume resistivity largely fluctuates depending on differences in the sintering conditions, a problem occurs in that it is difficult t

Method used

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  • Aluminum oxide sintered body, method for producing the same and member for semiconductor producing apparatus
  • Aluminum oxide sintered body, method for producing the same and member for semiconductor producing apparatus
  • Aluminum oxide sintered body, method for producing the same and member for semiconductor producing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Example

Examples 1 to 9 and Comparative Examples 1 to 6

[0034]Aluminum sintered bodies of Examples 1 to 9 and Comparative Examples 1 to 6 were prepared and evaluated. Contents thereof will be detailed below.

[0035]1. Powder of Raw Material

[0036]Powders of raw materials shown below were used. A commercially available Al2O3 powder having a purity of 99.5% or more and an average particle diameter of 0.6 μm was used. A commercially available oxide powder such as europium oxide having a purity of 99.9% or more and an average particle diameter of 2 μm or less was used. An AlN powder containing impurity oxygen of 0.87% by weight and having an average particle diameter of 1.1 μm was used. Average particle diameters of the raw material powders are values measured by a laser diffraction method.

[0037]2. Powder Mixture

[0038]The respective powders were measured in the parts by weight shown in Table 1 and wet-mixed in a solvent of isopropyl alcohol in a polyethylene pot with alumina pebbles having a diamet...

Example

[0051]Still furthermore, in Comparative Examples 3 and 4, in place of AlN, CeO2 was added, and in Comparative Example 5, in place of AlN, Pr6O11 was added. In Comparative Example 3, irrespective of such a small thickness of a sintered body as 5 mm, the inside to outside ratio ρin / ρout was as large as 1.7. Furthermore, in Comparative Example 4, although the thickness of the sintered body was as large as 10 mm, the same as in the respective Examples, the inside to outside ratio ρin / ρout became even larger such as 2.2. In Comparative Example 5 as well, although the thickness of the sintered body was as large as 10 mm, the same as in the respective Examples, in this case, the inside to outside ratio ρin / ρout became very large such as 20. From these results, it was found that AlN is highly effective at suppressing a distribution of the volume resistivity over the whole sintered body in comparison with CeO2 and Pr6O11.

Example

[0052]In FIG. 2, a SEM photograph of a mirror-polished cross-section of Example 7 is shown, and, in FIG. 3, SEM photographs of a mirror-polished cross-section of Comparative Example 2 are shown. FIG. 3A is a SEM photograph of an inside portion of Comparative Example 2 and FIG. 3B is a SEM photograph of an outside portion of Comparative Example 2. Of the respective SEM photographs, a deep grey portion forming a background shows Al2O3, thin grey portions scattered in plate show crystals having peaks coinciding with EuAl12O29, and brilliant white portions found only in FIG. 3A show crystals having peaks coinciding with EuAlO3. As is obvious from the SEM photographs, in the sintered body of Example 7, EuAlO3 was not present, and plate-like crystals having peaks coinciding with EuAl12O19 were dispersed. On the other hand, in Comparative Example 2, in an outside portion, plate-like crystals having peaks coinciding with EuAl22O29 were dispersed and crystals having peaks coinciding with EuA...

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Abstract

An aluminum oxide sintered body of the invention includes: europium and nitrogen; and plate-like crystals having peaks coinciding with EuAl12O19 in an X-ray diffraction profile dispersed over a whole sintered body. Such an aluminum oxide sintered body can be obtained by: forming a mixed powder containing an alumina powder, a europium compound powder and an aluminum nitride powder into a green body having a predetermined shape; and sintering the green body under a non-oxidizing atmosphere.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an aluminum oxide sintered body, a method for producing the same and a member for a semiconductor producing apparatus.[0003]2. Description of the Related Art[0004]An electrostatic chuck has been used to fix a wafer in a semiconductor producing apparatus. The electrostatic chuck includes an internal electrode for applying a voltage and a dielectric layer stuck on the internal electrode and is configured so that, when a voltage is applied to the internal electrode with the wafer disposed on the electrostatic chuck, an electrostatic chucking force is generated between the dielectric layer and the wafer. There are two types of electrostatic chucks, that is, a monopolar electrostatic chuck having one internal electrode and a bipolar electrostatic chuck having a pair of internal electrodes (namely, two) disposed separately from each other. In the monopolar electrostatic chuck, the electrostati...

Claims

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Application Information

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IPC IPC(8): C04B35/10
CPCC04B35/117C04B2235/96C04B2235/3217C04B2235/3222C04B2235/3224C04B2235/3229C04B2235/3865C04B2235/5436C04B2235/5445C04B2235/656C04B2235/721C04B2235/722C04B2235/77C04B2235/78C04B2235/80C04B35/645
Inventor TERATANI, NAOMIKATSUDA, YUJI
Owner NGK INSULATORS LTD
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