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System and method for increasing breakdown voltage of locos isolated devices

a technology of locos isolation and breakdown voltage, applied in the field of semiconductor/solid-state device manufacturing, basic electric elements, electric devices, etc., can solve the problem of lower breakdown voltage of the abrupt bird's beak

Inactive Publication Date: 2011-03-17
NAT SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach effectively increases the breakdown voltage by minimizing impact ionization while allowing for flexible field oxide profile creation, enabling higher breakdown voltage in critical areas without compromising packing density.

Problems solved by technology

A major drawback of the abrupt bird's beak is that the abrupt bird's beak has a lower breakdown voltage.

Method used

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  • System and method for increasing breakdown voltage of locos isolated devices
  • System and method for increasing breakdown voltage of locos isolated devices
  • System and method for increasing breakdown voltage of locos isolated devices

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Embodiment Construction

[0031]FIGS. 5 through 10, discussed below, and the various embodiments used to describe the principles of the present invention in this patent document are by way of illustration only and should not be construed in any way to limit the scope of the invention. Persons who are skilled in the art will understand that the principles of the present invention may be implemented in any type of suitably arranged semiconductor device.

[0032]FIG. 5 illustrates a first stage of a manufacturing method for a prior art integrated circuit device. The structure 500 shown in FIG. 5 comprises a layer of silicon substrate 510. A layer of pad oxide 520 made up of silicon dioxide (SiO2) is placed on the silicon substrate 510. In a typical prior art integrated circuit device the thickness of the pad oxide 520 is approximately two hundred fifty Ångstroms (250 Å). An Ångstrom is 10−10 meter.

[0033]Then a layer 530 of silicon nitride (Si3N4) is placed on the layer pad oxide 520. In a typical prior art integra...

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Abstract

An efficient method is disclosed for increasing the breakdown voltage of an integrated circuit device that is isolated by a local oxidation of silicon (LOCOS) process. The method comprises forming a portion of a field oxide in an integrated circuit so that the field oxide has a gradual profile. The gradual profile of the field oxide reduces impact ionization in the field oxide by creating a reduced value of electric field for a given value of applied voltage. The reduction in impact ionization increases the breakdown voltage of the integrated circuit. The gradual profile is formed by using an increased thickness of pad oxide and a reduced thickness of silicon nitride during a field oxide oxidation process.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This patent application is related to U.S. patent application Ser. No. (Attorney Docket Number P06588) entitled “System and Method for Creating Different Field Oxide Profiles in a LOCOS Process” that is being filed concurrently with this patent application. This patent application and U.S. patent application Ser. No. (Attorney Docket Number P06588) are both owned by the same assignee.TECHNICAL FIELD OF THE INVENTION[0002]The present invention is generally directed to semiconductor technology and, in particular, to a method for increasing the breakdown voltage of integrated circuit devices that are isolated by a local oxidation of silicon (LOCOS) process.BACKGROUND OF THE INVENTION[0003]In recent years, there have been great advancements in the speed, power, and complexity of integrated circuits. Large scale integrated circuits comprise thousands of devices placed on a single integrated circuit chip. A standard process for electrically isol...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/762
CPCH01L21/76205
Inventor FOOTE, JR., RICHARD W.LINES, TERRY LEESADOVNIKOV, ALEXEISTRACHAN, ANDY
Owner NAT SEMICON CORP