Observation device and observation method

a technology of observation device and observation method, which is applied in the direction of semiconductor/solid-state device testing/measurement, instruments, television systems, etc., can solve the problem of affecting the yield of circuit elements created from wafers, and achieve the effect of high precision
US20110109738A1Inactive Publication Date: 2011-05-12NIKON CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
NIKON CORP
Publication Date
2011-05-12
Estimated Expiration
Not applicable · inactive patent

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Abstract

An observation device (1) for observing a portion near the end of a wafer (10), comprising an imaging section (40) for imaging an image near the end of a wafer (10) from the extending direction of the wafer (10), and an image processing section (50) for detecting the edge of a film formed on the surface of the wafer (10) is further provided, as an illumination section for illuminating a portion near the end of a wafer (10), with an epi-illumination source (48) for illuminating a portion near the end of a wafer (10) via an observation optical system (41), and a diffusion illumination source (31) arranged to face the surface of the wafer (10) and illuminate a portion near the end of a wafer (10) using diffused light.
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Description

[0001] This is a continuation of PCT International Application No. PCT / JP2009 / 058271, filed on Apr. 27, 2009, which is hereby incorporated by reference. This application also claims the benefit of Japanese Patent Application No. 2008-118931, filed in Japan on Apr. 30, 2008, which is hereby incorporated by reference.TECHNICAL FIELD

[0002] The present invention relates to an observation device and an observation method for observing semiconductor wafers, liquid-crystal glass substrates, and other substrates.TECHNICAL BACKGROUND

[0003] Over the past several years, the degree of integration of circuit element patterns formed on a semiconductor wafer is progressing and the types of thin films used in wafer surface treatments in semiconductor manufacturing steps is increasing. In accordance therewith, it is becoming increasingly important to detect defects near the end of a wafer where the edge (boundary portion) of the thin film is exposed. When foreign matter is present near the end of a waf...

Claims

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