Observation device and observation method

a technology of observation device and observation method, which is applied in the direction of semiconductor/solid-state device testing/measurement, instruments, television systems, etc., can solve the problem of affecting the yield of circuit elements created from wafers, and achieve the effect of high precision

Inactive Publication Date: 2011-05-12
NIKON CORP
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0021]In accordance with the present invention, the edge of the film formed on the surface of a substrate can be detected with high precision.

Problems solved by technology

When foreign matter is present near the end of a wafer, it wraps around to the surface side of the wafer, produces an adverse effect in later steps, and affects the yield of circuit elements created from a wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Observation device and observation method
  • Observation device and observation method
  • Observation device and observation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033]Preferred embodiments of the present invention are described below. An example of the observation device according to the present invention is shown in FIG. 1, and the observation device 1 is used for visual observation by an observer to detect the presence of abnormalities in an end or near the end of a semiconductor wafer 10 (hereinafter referred to as “wafer 10”).

[0034]The wafer 10, which is a substrate, is formed in a thin circular shape, and a thin protective film 15 is formed on the surface thereof, as shown in FIG. 2. An upper bevel portion 11 that slopes facing the external peripheral end side of the wafer 10 is formed in the shape of a ring inside the external peripheral end in the surface (upper surface) of the wafer 10, and a flat portion 14 that is substantially flat is formed inside the upper bevel portion 11. Also, a lower bevel portion 12 is formed in obverse / reverse symmetry with the upper bevel portion 11 about the wafer 10 inside the external peripheral end o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An observation device (1) for observing a portion near the end of a wafer (10), comprising an imaging section (40) for imaging an image near the end of a wafer (10) from the extending direction of the wafer (10), and an image processing section (50) for detecting the edge of a film formed on the surface of the wafer (10) is further provided, as an illumination section for illuminating a portion near the end of a wafer (10), with an epi-illumination source (48) for illuminating a portion near the end of a wafer (10) via an observation optical system (41), and a diffusion illumination source (31) arranged to face the surface of the wafer (10) and illuminate a portion near the end of a wafer (10) using diffused light.

Description

[0001]This is a continuation of PCT International Application No. PCT / JP2009 / 058271, filed on Apr. 27, 2009, which is hereby incorporated by reference. This application also claims the benefit of Japanese Patent Application No. 2008-118931, filed in Japan on Apr. 30, 2008, which is hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates to an observation device and an observation method for observing semiconductor wafers, liquid-crystal glass substrates, and other substrates.TECHNICAL BACKGROUND[0003]Over the past several years, the degree of integration of circuit element patterns formed on a semiconductor wafer is progressing and the types of thin films used in wafer surface treatments in semiconductor manufacturing steps is increasing. In accordance therewith, it is becoming increasingly important to detect defects near the end of a wafer where the edge (boundary portion) of the thin film is exposed. When foreign matter is present near the end of a waf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): H04N7/18
CPCG01B11/02G01N21/9503G01N21/9501H01L22/12H01L21/67288
Inventor SAKAGUCHI, NAOSHIWATANABE, TAKASHITAKAHASHI, MASASHIOKAMOTO, HIROAKI
Owner NIKON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap