Sidewall image transfer process employing a cap material layer for a metal nitride layer

a metal nitride layer and image transfer technology, applied in the direction of semiconductor/solid-state device manufacturing, basic electric elements, electric apparatus, etc., can solve the problems of loss or distortion of transfer pattern fidelity, and achieve high-fidelity reproduction
US20120282779A1Inactive Publication Date: 2012-11-08INT BUSINESS MASCH CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
INT BUSINESS MASCH CORP
Publication Date
2012-11-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.
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Description

BACKGROUND

[0001] The present disclosure generally relates to a process for manufacturing semiconductor structures, and particularly to methods for sidewall image transfer employing a dielectric cap material layer on top of a metal nitride layer.

[0002] A sidewall image transfer (SIT) process as known in the art employs a titanium nitride layer as an etch mask for transferring a composite image of two independent images. An organic planarizing layer (OPL) is formed directly on the titanium nitride layer, and is consumed during the transfer of the composite pattern into the titanium nitride layer. The OPL tends to be consumed during the pattern transfer into the titanium nitride layer, resulting in distortion or loss of fidelity in the transferred pattern in the titanium nitride layer. A method of enhancing the fidelity of pattern transfer during a SIT process is desired.BRIEF SUMMARY

[0003] A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, ...

Claims

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