Semiconductor substrate having high and low-resistivity portions

Abstract

Systems and methods are disclosed for disposing high and low-resistivity portions of semiconductor substrate in proximity to an active radio frequency (RF) device, thereby at least partially controlling harmonic interference associated with the device. The device may be disposed above the high-resistivity portion, and at least partially surrounded by the low-resistivity portion. The high and low-resistivity portions may provide various benefits associated with interference attenuation, thermal properties, or other benefits. The low-resistivity region can be disposed an optimized distance away from the device.

Description

BACKGROUND[0001]1. Field[0002]The present disclosure generally relates to the field of electronics, and more particularly, to radio frequency front-end modules.[0003]2. Description of Related Art[0004]Radio frequency (RF) is a common term for a range of frequency of electromagnetic radiation typically used to produce and detect radio waves. Such a range can be from about 30 kHz to 300 GHz. Wireless communication devices often include front-end circuitry for processing or conditioning RF signals at an incoming or outgoing frequency or signal port. RF front-end modules may be components of receiver, transmitter, or transceiver systems associated with a wireless device.[0005]RF front-end design may include a number of considerations, including complexity, substrate compatibility, performance, and integration.SUMMARY[0006]Certain embodiments disclosed herein provide a semiconductor die including a silicon substrate having a high-resistivity portion, an active RF device disposed on the s...

AI Technical Summary

Benefits of technology

The patent text describes a semiconductor die that includes one or more trenches between the RF device and the low-resistivity region. These trenches help to reduce parasitic coupling between the RF device and the low-resistivity well, which can improve the performance of the semiconductor device. In simple terms, this technology helps to make semiconductor devices more efficient and effective.

Problems solved by technology

The semiconductor die may further include a layer of high resistivity amorphous silicon silicon with relatively high resistance and poor free-carrier conduction properties.

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