Substrate treatment apparatus and substrate treatment method
a substrate treatment and treatment apparatus technology, applied in the direction of instruments, cleaning using liquids, inorganic non-surface active detergent compositions, etc., can solve the problem of resist damage to the front surface of the wafer uncovered with resist, and achieve the effect of strong oxidative power
Inactive Publication Date: 2014-02-13
DAINIPPON SCREEN MTG CO LTD
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- Abstract
- Description
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- Application Information
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Benefits of technology
The present invention provides a substrate treatment apparatus and method that can remove resist from a substrate by using sulfuric acid ozone containing peroxodisulfuric acid. This substance has stronger oxidative power at higher temperatures, making it effective in removing resist from the substrate's surface. The apparatus can supply higher temperature sulfuric acid ozone containing more peroxodisulfuric acid to the substrate for optimal results.
Problems solved by technology
Method used
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Effect test
example 1
[0083]The flow rate ratio (weight ratio) between the sulfuric acid ozone (SOM) and the DIW in the sulfuric acid ozone / water mixture was 1:0.15 by way of example.
[0084]The liquid temperature (treatment temperature) of the sulfuric acid ozone / water mixture spouted from the sulfuric acid ozone / water nozzle 5 after the mixing was 134° C.
example 2
[0085]The flow rate ratio (weight ratio) between the sulfuric acid ozone and the DIW in the sulfuric acid ozone / water mixture was 1:0.3 by way of example. The liquid temperature (treatment temperature) of the sulfuric acid ozone / water mixture spouted from the sulfuric acid ozone / water nozzle 5 after the mixing was 151° C.
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Abstract
A substrate treatment apparatus is provided which is used for removing a resist from a front surface of a substrate. The apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone / water mixture supplying unit which supplies a sulfuric acid ozone / water mixture to the front surface of the substrate held by the substrate holding unit, the sulfuric acid ozone / water mixture being a mixture which is prepared by mixing water with sulfuric acid ozone prepared by dissolving ozone gas in sulfuric acid.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate treatment apparatus and a substrate treatment method for removing a resist from a substrate such as a semiconductor wafer.[0003]2. Description of Related Art[0004]In production processes for semiconductor devices, liquid crystal display devices and the like, a substrate treatment apparatus of a single substrate treatment type adapted to treat a single substrate at a time is often used for treating a substrate front surface with a treatment liquid. The substrate treatment apparatus of the single substrate treatment type includes a spin chuck which generally horizontally holds and rotates the substrate, and a nozzle which spouts the treatment liquid toward the front surface of the substrate rotated by the spin chuck.[0005]A semiconductor device production process, for example, includes the step of locally implanting an impurity such as phosphorus, arsenic or boron (ions) into a...
Claims
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IPC IPC(8): H01L21/306
CPCH01L21/30604H01L21/6708G03F7/423H01L21/31133C11D2111/22B08B3/041B08B3/08B08B3/10B08B2203/005B08B2203/007C11D7/08H01L21/02057H01L21/67051
Inventor IWATA, KEIJITSUJIKAWA, HIROKITSUDA, SHOTAROANO, SEIJI
Owner DAINIPPON SCREEN MTG CO LTD



