Substrate treatment apparatus and substrate treatment method

Abstract

A substrate treatment apparatus is provided which is used for removing a resist from a front surface of a substrate. The apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone/water mixture supplying unit which supplies a sulfuric acid ozone/water mixture to the front surface of the substrate held by the substrate holding unit, the sulfuric acid ozone/water mixture being a mixture which is prepared by mixing water with sulfuric acid ozone prepared by dissolving ozone gas in sulfuric acid.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate treatment apparatus and a substrate treatment method for removing a resist from a substrate such as a semiconductor wafer.[0003]2. Description of Related Art[0004]In production processes for semiconductor devices, liquid crystal display devices and the like, a substrate treatment apparatus of a single substrate treatment type adapted to treat a single substrate at a time is often used for treating a substrate front surface with a treatment liquid. The substrate treatment apparatus of the single substrate treatment type includes a spin chuck which generally horizontally holds and rotates the substrate, and a nozzle which spouts the treatment liquid toward the front surface of the substrate rotated by the spin chuck.[0005]A semiconductor device production process, for example, includes the step of locally implanting an impurity such as phosphorus, arsenic or boron (ions) into a...

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Benefits of technology

[0032]Thus, the higher temperature sulfuric acid ozone containing a greater amount of ozone gas dissolved therein can be supplied to the front surface of the substrate. The sulfuric acid ozone in which a greater amount of ozone gas is dissolved contains a greater amount of peroxodisulfuric acid. In addition, the peroxodisulfuric acid exhibits stronger oxidative power at a higher temperature, so that the resist can be advantageously removed from the front surface of the substrate.

Problems solved by technology

However, the irradiation with the oxygen plasma for the ashing of the resist damages a portion of the front surface of the wafer uncovered with the resist (e.g., an oxide film exposed from the resist pattern).

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