Method for forming void-free polysilicon and method for fabricating semiconductor device using the same

a technology of void-free polysilicon and void-free polysilicon, which is applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of resistive failure, increase in the size of the void existing in the contact plug, and increase the interface resistance of the contact plug

Active Publication Date: 2014-06-26
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, as a semiconductor device is highly integrated, the size of a void existing in a contact plug increases.
However, as a subsequent heat process is performed, the void may be moved to a top or bottom i

Method used

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  • Method for forming void-free polysilicon and method for fabricating semiconductor device using the same
  • Method for forming void-free polysilicon and method for fabricating semiconductor device using the same
  • Method for forming void-free polysilicon and method for fabricating semiconductor device using the same

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Embodiment Construction

[0022]Various embodiments will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the present invention.

[0023]The drawings are not necessarily to scale and in some instances, proportions may have been exaggerated in order to clearly illustrate features of the embodiments. When a first layer is referred to as being “on” a second layer or “on” a substrate, it not only refers to a case where the first layer is formed directly on the second layer or the substrate but also a case where a third layer exists between the first ...

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Abstract

A method for fabricating a semiconductor device includes forming a buried gate electrode in a semiconductor substrate. An insulating layer is formed over the buried gate electrode and is etched to form a contact hole exposing the semiconductor substrate. A sacrificial spacer is formed on sidewalls of the insulating layer defining the contact hole. A polysilicon layer pattern is formed in the contact hole. The sacrificial spacer is removed to form an air gap around the polysilicon layer pattern. A thermal process is performed to remove a seam existing in the polysilicon layer pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application claims priority of Korean Patent Application No. 10-2012-0153822, filed on Dec. 26, 2012, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Field[0003]Exemplary embodiments of the present invention relate to a method for fabricating a semiconductor device, and more particularly, to a method for forming void-free polysilicon and a method for fabricating a semiconductor device using the same.[0004]2. Description of the Related Art[0005]When a contact plug, such as a bit line contact plug or storage node contact plug, is formed, polysilicon may be used.[0006]However, when a contact hole having a high aspect ratio is gap-filled with polysilicon, slits occur in the polysilicon. The slits occur when the surfaces of polysilicon which is grown while depositing from the bottom surface of the contact hole meet each other. The slits are hold together in a direction to minimize the surface areas of t...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/7688H01L21/76883H01L21/76831H01L21/76847H01L2221/1063H01L21/76897H01L21/7682H10B12/485H10B99/00H10B12/00H10B12/03H10B12/053H10B12/482H10B61/22H10B63/30H01L21/28079H01L21/28088H01L21/31111H01L21/31116H01L21/31144H01L21/324H01L21/76802
Inventor KIM, HYUNG-KYUN
Owner SK HYNIX INC
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