Method of forming anneal-resistant embedded resistor for non-volatile memory application
a non-volatile memory and resistor technology, applied in resistors, basic electric elements, electric devices, etc., can solve the problems of resistors that cannot be used in non-volatile memory devices at high temperature, resistors are the needs of diodes to achieve high-temperature activation, and scaling issues that pose challenges to traditional non-volatile memory technology
Inactive Publication Date: 2014-12-11
SANDISK TECH LLC
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- Application Information
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Benefits of technology
The patent describes a type of memory device that uses a resistor and does not need to be powered to maintain its data. The device includes a diode, a layer of metal silicon nitride embedded resistor, and a layer of resistive switching material between two electrodes. The methods for making the device involve forming the diode and metal silicon nitride embedded resistor, then adding the first electrode layer, resistive switching layer, and second electrode layer. The technical effect of this invention is the creation of a nonvolatile memory device with a embedded resistor that allows for faster data processing and reduced power consumption.
Problems solved by technology
However, as device dimensions shrink, scaling issues are posing challenges for traditional nonvolatile memory technology.
Manufacturing constraints, however, place limitations on the type of resistor that can be used in nonvolatile memory devices.
One significant hurdle for a suitable resistor is the high temperature activation needs of the diode.
Method used
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Embodiment Construction
[0028]Embodiments generally described herein provide a nonvolatile memory element device having an embedded resistor used in conjunction with a ReRAM device and a diode and methods of forming the same. Embodiments generally provide improved performance and increased usable lifetime of nonvolatile memory devices. It is noted that relative directional terms used herein with regard to embodiments are for purposes of description only, and do not limit the scope of the invention. Specifically, directional terms such as “over,”“above,”“under,” and the like are used under the assumption that substrate on which embodiments are formed is a “bottom” element and is therefore “under” elements of the invention formed thereon.
[0029]The diode in a nonvolatile memory device only controls passage of current in one direction or the other, but it does not suppress the current. To prevent over-programming of the memory device due to extraneous current passing through the device, an additional resistor ...
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Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
Description
CROSS REFERENCE TO RELATED APPLICATIONS[0001]This is a Continuation Application of U.S. patent application Ser. No. 13 / 692,850, filed on Dec. 3, 2012, which is herein incorporated by reference for all purposes.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This invention relates to nonvolatile memory elements, and more particularly, to methods for forming resistive switching memory elements used in nonvolatile memory devices.[0004]2. Description of the Related Art[0005]Nonvolatile memory elements are used in systems in which persistent storage is required. For example, digital cameras use nonvolatile memory cards to store images and digital music players use nonvolatile memory to store audio data. Nonvolatile memory is also used to persistently store data in computer environments.[0006]Nonvolatile memory is often formed using electrically-erasable programmable read only memory (EEPROM) technology. This type of nonvolatile memory contains floating gate transistors th...
Claims
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IPC IPC(8): H01L45/00H01L21/285H01L49/02
CPCH01L45/1616H01L21/28506H01L45/146H01L28/24H10B63/20H10B63/80H10N70/25H10N70/24H10N70/801H10N70/023H10N70/041H10N70/826H10N70/8833H10B63/00H10N70/231H10N70/841
InventorTENDULKAR, MIHIRCHI, DAVID
OwnerSANDISK TECH LLC