Substrate processing apparatus

Abstract

Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having an opened upper portion, the main chamber having a passage that is defined in a sidewall thereof so that a substrate is accessible, a chamber cover disposed on the opened upper portion of the main chamber to provide a process space, which is sealed from the outside, in which the process is performed, a susceptor plate on which the substrate is placed, the susceptor plate having an inner space with an opened lower portion, and a main heater rotatably disposed in the inner space, the main heater being spaced apart from the susceptor plate to heat the susceptor plate.

Description

TECHNICAL FIELD[0001]The present invention disclosed herein relates to an apparatus for processing a substrate, and more particularly, to a substrate processing apparatus which improves a process temperature distribution within a substrate by using a susceptor plate disposed above a heater.BACKGROUND ART[0002]Uniform heat treatment of a substrate at a high temperature is required in a semiconductor device manufacturing process. Examples of the semiconductor device manufacturing process may include chemical vapor deposition and silicon epitaxial growth processes in which a material layer is deposited on a semiconductor substrate placed on a susceptor within a reactor in a gaseous state. The susceptor may be heated at a high temperature ranging from about 400° C. to about 1,250° C. by resistance heating, radio-frequency heating, and infrared heating. Also, a gas may pass through the reactor, and thus a deposition process may occur very close to a surface of the substrate by chemical r...

AI Technical Summary

Benefits of technology

The present invention improves the temperature gradient of a substrate and reduces the process reaction time by using a susceptor plate to heat the substrate indirectly through a heater placed above it. Additionally, a heater on the chamber cover's upper portion predefines the process gas, leading to a more efficient process.

Problems solved by technology

First, one example of the important issues is ‘quality’ of each of the deposited layers.

Second, another example of the issues is a uniform thickness over the wafer.

The other issue with respect to the deposition may be a filling space.

Among the issues, uniformity is one of very important issues with respect to the deposition process.

A non-uniform layer may cause high electrical resistance on the metal lines to increase possibility of mechanical damage.

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