Imaging device and electronic device
a technology of electronic devices and imaging devices, applied in the direction of diodes, radiation controlled devices, semiconductor devices, etc., can solve the problems of low illumination conditions, difficult imaging, and decrease in light sensitivity, and achieve low illumination conditions, easy imaging, and high resolution
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embodiment 1
[0076]In this embodiment, an imaging device that is one embodiment of the present invention is described with reference to drawings.
[0077]FIG. 1 illustrates a pixel circuit that can be used for an imaging device in one embodiment of the present invention. The pixel circuit includes a transistor 51, a transistor 52, a transistor 53, a transistor 54, and a photoelectric conversion element 60.
[0078]One electrode of the photoelectric conversion element 60 is electrically connected to one of a source electrode and a drain electrode of the transistor 51. The one electrode of the photoelectric conversion element 60 is electrically connected to one of a source electrode and a drain electrode of the transistor 53. The other of the source electrode and the drain electrode of the transistor 51 is electrically connected to a gate electrode of the transistor 52. One of a source electrode and a drain electrode of the transistor 52 is electrically connected to one of a source electrode and a drain...
embodiment 2
[0181]In this embodiment, a transistor including an oxide semiconductor that can be used in one embodiment of the present invention is described with reference to drawings. In the drawings in this embodiment, some components are enlarged, reduced in size, or omitted for easy understanding.
[0182]FIGS. 24A and 24B are a top view and a cross-sectional view illustrating a transistor 101 in one embodiment of the present invention. FIG. 24A is a top view, and a cross section in the direction of dashed-dotted line B1-B2 in FIG. 24A is illustrated in FIG. 24B. A cross section in the direction of dashed-dotted line B3-B4 in FIG. 24A is illustrated in FIG. 26A. The direction of dashed-dotted line B1-B2 is referred to as a channel length direction, and the direction of dashed-dotted line B3-B4 is referred to as a channel width direction.
[0183]The transistor 101 includes an insulating layer 120 in contact with a substrate 115; an oxide semiconductor layer 130 in contact with the insulating laye...
embodiment 3
[0243]In this embodiment, components of the transistors described in Embodiment 2 are described in detail.
[0244]As the substrate 115, a glass substrate, a quartz substrate, a semiconductor substrate, a ceramic substrate, a metal substrate having a surface subjected to insulation treatment, or the like can be used. The substrate 115 can be a silicon substrate provided with a transistor and / or a photodiode; and an insulating layer, a wiring, a conductor functioning as a contact plug, and the like that are provided over the silicon substrate. Note that when p-channel transistors are formed using the silicon substrate, a silicon substrate with n−-type conductivity is preferably used. Alternatively, an SOI substrate including an n−-type or i-type silicon layer may be used. In the case where a p-channel transistor is formed using the silicon substrate, a surface of the silicon substrate where the transistor is formed preferably has a (110) plane orientation. Forming a p-channel transistor...
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