Sense amplifier driving device and semiconductor device including the same

Abstract

A sense amplifier driving device may include a sense amplifier driving block configured to supply a post overdriving voltage to a pull-up power line coupled to a sense amplifier, the post overdriving voltage supplied to the sense amplifier during a post overdriving operation period in correspondence to a pull-up driving signal. The sense amplifier driving device may include a driving signal generation block configured to compare a reference voltage, set by a voltage trimming signal, with a level of a power supply voltage, and generate the pull-up driving signal for controlling whether to perform a post overdriving operation.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. §119(a) to Korean application number 10-2015-0043256, filed on Mar. 27, 2015, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]Various embodiments generally relate to a sense amplifier driving device and a semiconductor device including the sense amplifier driving device. More particularly, various embodiments relate to a technology for improving the post overdriving operation characteristic of a semiconductor device.[0004]2. Related Art[0005]Semiconductor memory devices are being developed to increase the degree of integration and the operating speeds of the semiconductor memory devices. In order to increase the operating speeds of the semiconductor memory devices, a synchronous memory device has been developed. This synchronous memory device is capable of operating in synchronization with a...

AI Technical Summary

Benefits of technology

The patent describes a device that controls the operation of a sense amplifier in a semiconductor device. The device includes a driving device that generates a signal to control whether or not to perform a post overdriving operation, based on a reference voltage and the level of power supply voltage. The driving device selectively supplies a post overdriving voltage to the pull-up power line during the post overdriving operation period. This technology allows for better control and optimization of the sense amplifier's operation, leading to improved performance of the semiconductor device.

Problems solved by technology

However, the SDR synchronous memory device has difficulty in operating with systems requiring high speed operations.

Due to this fact, as the amount of charges of the cell of a DRAM decreases, the refresh and tWR (a time during which a precharge command may be applied after a point of time at which a write command is applied) characteristics of the DRAM may deteriorate.

Therefore, in the case where the POD operation is performed regardless of the level of a power supply voltage, an efficient sense operation may not be performed.

In other words, if a power supply voltage is high, as a pair of bit lines are excessively overshot, unnecessary current consumption is caused.

Conversely, if the power supply voltage is low, the bit line or the bit bar line may not quickly reach the target voltage level, and thus, the stable speed of the semiconductor memory device may not be ensured.

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