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Chemical Mechanical Polishing Conditioner

a technology of mechanical polishing and conditioner, which is applied in the field of chemical mechanical polishing conditioner, can solve the problems of shortening the life of the pad, reducing the polishing efficiency of the layer, and reducing the efficiency of the polishing, so as to achieve speedy and large-scale mass production

Inactive Publication Date: 2016-12-01
KINIK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about a method of manufacturing a CMP conditioner which is a machine used in semiconductor manufacturing processes. The CMP conditioner has multiple concave portions that are formed through the substrate. These concave portions provide better fixing effects for abrasive units and allow for control of the distance between the abrasive tip and the horizontal top surface by changing the depth of each concave portion. The CMP conditioner can be manufactured quickly and in large quantities. The polishing capability of different regions of the CMP conditioner can be regulated by the base of the abrasive units and the abrasive tips, and the continuously different dressing depths are formed on the abrasive tips by the different arrangements of the binding layer. The CMP conditioner meets the requirements of the current industry.

Problems solved by technology

The hardened layer decreases the polishing efficiency and shortens the lifetime of the pad.
However only the cutting ends of the cutting tool protrude from the working surface, and the cutting ends are really smaller than the whole cutting unit.
The processes are very complicated and time consuming.
It is not good for mass production.
The problem of this patent is that the inclined angle between the polishing pad and the dressing member cannot be regulated partially during the polishing process.
The problem of this patent is that working complication and high accuracy of processing are hard to control.

Method used

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  • Chemical Mechanical Polishing Conditioner
  • Chemical Mechanical Polishing Conditioner
  • Chemical Mechanical Polishing Conditioner

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0081]With reference to FIGS. 1 and 2, a first embodiment of the present invention provides a CMP conditioner 1 comprising a substrate 10 and six abrasive units 20. The substrate 10 is circular. The substrate 10 is made of stainless steel. The thickness of the substrate 10 is 6 mm. The substrate 10 comprises a horizontal top surface 11 and a central axis. A normal direction of the horizontal top surface 11 is parallel to the central axis, and the central axis is on the center of the horizontal top surface 11. The abrasive units 20 are mounted on the horizontal top surface 11, and the abrasive units 20 are arranged around the outer edge of the horizontal top surface 11 along the central axis at spaced intervals. Each of the six abrasive units 20 comprises a base 21 of the abrasive unit, an abrasive layer 22, a mat 23, and a binding layer 24. The base 21 of the abrasive unit is a conductive base. The base 21 of the abrasive unit is made of tungsten carbide. The base 21 of the abrasive...

embodiment 2

[0086]With reference to FIGS. 3, 4A and 4B, a second embodiment of the present invention provides a CMP conditioner 1A substantially same as the CMP conditioner 1 of the first embodiment. The difference is that the substrate 10A is made of ceramic materials. The thickness of the substrate 10A is 10 mm.

[0087]The number of the abrasive units 20A is three. The base 21A of the abrasive unit is arc-shaped. The base 21A of the abrasive unit is an insulated base. The base 21A of the abrasive unit is made of silicon carbide. The base 21A of the abrasive unit comprises a smooth surface. The abrasive layer 22A is deposited on the smooth surface by CVD. Multiple abrasive tips 221A are formed through the above method. The shortest vertical distances d1 between a tip of each abrasive tip 221A and the lower surface is 5 mm. The height difference d2 between the abrasive tips 221A on the mating side 212A and the abrasive tips 221A on the abutting side 211A is 20 μm.

[0088]The mat 23A is made of plas...

embodiment 3

[0091]With reference to FIGS. 5 and 6, a third embodiment of the present invention provides a CMP conditioner 1B substantially same as the CMP conditioner 1 of the first embodiment. The difference is that the number of the abrasive units 20B is four. The base 21B of the abrasive units is elongated. The abrasive units 20B are arranged in a cross symbol. The shape of each abrasive tip 221B is rectangular prism. The tip angle of each abrasive tip 221B is 90°. The inclined plane 241B of the partial binding layer 24B faces to the central axis of the substrate 10B, and the inclined plane 241B of the other binding layer 24B faces away from the central axis of the substrate 10B.

[0092]The third embodiment of the present invention provides a CMP conditioner 1B that utilizes changing shapes of the abrasive tips 221B and the direction of the inclined plane 241B for the binding layer 24B to achieve different polishing capabilities from CMP conditioner 1 of the first embodiment of the present inv...

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Abstract

Provided is a chemical mechanical polishing (CMP) conditioner comprising: a substrate comprising a horizontal top surface and multiple abrasive units mounted on the horizontal top surface. Each abrasive unit comprises a base of the abrasive unit, an abrasive layer, and a binding layer. The base of the abrasive unit comprises an upper surface and a lower surface. The abrasive layer is formed on the upper surface and comprises multiple abrasive tips. The binding layer is formed between the lower surface and the substrate, and an inclined plane is formed towards the lower surface. The present invention further provides a method for manufacturing the CMP conditioner. The polishing capabilities of different regions of CMP conditioner can be regulated by the abrasive units. Then the CMP conditioner of the present invention satisfies the requirements in the current industry about different polishing capabilities.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)[0001]This application is based upon and claims priority under 35 U.S.C. 119(a) from Taiwan Patent Application No. 104117686 filed on Jun. 1, 2015, which is hereby specifically incorporated herein by this reference thereto.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to a chemical mechanical polishing field and more particularly to a chemical mechanical polishing (CMP) conditioner.2. Description of the Related Art[0003]CMP, being a large area planarization technique, is an important method for semiconductor manufacturing. Users can prepare a pad on the platform, and further add slurry on the surface of the pad. The pad can be rotated with the platform. The rotating direction of the pad is relative to a wafer, and the surface of the wafer is polished by the pad. It is beneficial to advance subsequent processes after planarization of the wafer. The efficiency of polishing may be preserved by maintainin...

Claims

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Application Information

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IPC IPC(8): B24B53/017B24D18/00
CPCB24D18/0027B24B53/017
Inventor CHOU, JUI-LINCHIU, CHIA-FENGLIAO, WEN-JENSU, XUE-SHEN
Owner KINIK