Composition and Method Used for Chemical Mechanical Planarization of Metals

a technology of mechanical planarization and composition, applied in the direction of lapping machines, manufacturing tools, other chemical processes, etc., can solve the problems of unsatisfactory dissolution process, non optically flat surface, undesired results on the wafer surface, etc., to facilitate the removal of metal, reduce the water content form, and contribute to undesirable polishing effects

Inactive Publication Date: 2017-12-28
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about a chemical mechanical planarization (CMP) composition that can remove metal from a wafer without causing polishing effects. The composition has the following technical effects: tunable metal removal rates, high particle stability, uniform metal surface, low susceptibility to dishing and erosion, low defectivity response, and low surface roughness. The composition can be produced in a reduced water content form while retaining high particle stability and can produce a highly planarized surface on the wafer over a range of operating pH values. The composition can also minimize the formation of micro-scratches onto the metal surface of the wafer and can be more easily concentrated.

Problems solved by technology

Generally, it is not desired for the dissolution process to occur on the surface of the wafer.
It is undesirable in an abrasive-containing liquid for the particles to settle out of the suspension.
Nonetheless, the use of an abrasive component in the CMP liquid can produce undesired results on the wafer surface.
The abrasive can create micro-scratches on any exposed surface of the wafer resulting in a non optically-flat surface.
For example, these micro-scratches can lead to a defect in later processing whereby a thin metal line is trapped within the dielectric, causing shorts between adjacent metal lines or vias.
Further, residual particles of the abrasive can cause potential opens or shorts depending on the electrical nature of the particle.
As a result, exposing the wafer surface to the mechanical action of the rotating pad in the presence of abrasive causes certain regions of the wafer surface to be more quickly removed than others, creating surface anomalies and a varying topography.
It is believed that etching of the metal surface of the wafer is one of the factors which contributes to undesired dishing.
Etching is the nonselective removal of metal from the surface of a layer, which tends to both roughen the resultant surface and create a nonplanar surface.
Where an array of copper metal lines is located on a wafer substrate, the mechanical action of the rotating pad in the presence of abrasive tends to cause formation of individual recesses of copper which in turn results in a high polishing rate of the adjacent dielectric.

Method used

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  • Composition and Method Used for Chemical Mechanical Planarization of Metals
  • Composition and Method Used for Chemical Mechanical Planarization of Metals
  • Composition and Method Used for Chemical Mechanical Planarization of Metals

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0046]The rates of removal for several materials on a wafer surface were evaluated using several formulations. The testing apparatus was an IPEC 472 unit from SpeedFam-IPEC Corporation, Phoenix, Ariz. The 22.5 inch (57.21 cm) diameter table was fitted with a pre-stacked K-grooved IC 1000 / SBA IV polishing pad from Rode Corp., Phoenix, Ariz. 85034. The table was rotated relative to a smaller diameter rotating carrier to which the 200 mm wafer was attached. Both the table, also known as the platen, and the carrier rotated in the same direction, but at different speeds. Polishing formulation was deposited onto the polishing pad and thereby conveyed by relative movement of the rotating pad to the carrier into contact with the wafer surface.

[0047]Several sets of process parameters were utilized during the course of evaluating various formulations for their ability to remove material from the wafer surface. The process parameters can affect the copper removal rate and the parameters for ea...

example 2

[0090]The ability of different particulate substances in the composition to enhance the copper removal rate was evaluated. A single formulation composition as set out in Table 9 below was used to evaluate various particulate materials.

[0091]The individual formulas were prepared by first blending aminoacetic acid, 1,2,4-triazole and water, then adding in the specific particulate material generally in the form of a pre-dispersion or other water-containing flowable form from the manufacturer; or alternatively directly from the powder or as a homogeneous laboratory-prepared mixture of powder and water optionally containing small amounts of stabilizing additive.

TABLE 9ComponentConcentrationH2O21%Aminoacetic Acid1%1,2,4-Triazole500 ppmParticulate Material0.1% Deionized WaterBalance

[0092]Various formulations were developed by substituting different particles and evaluating the rates of removal. The CMP protocol described in Example 1 (OP-I) was utilized for a one minute run time for formul...

example 3

[0105]The use of other amino acids in addition to aminoacetic acid was evaluated. Various formulations containing components identical but for the amino acid were prepared, having a base composition as ‘shown below in Table 11. The colloidal silica was the same as that described previously in Example 1. The test solutions were prepared by dissolving the desired amount of amino acid and 1,2,4-triazole in deionized water in an open container. To this solution was added the colloidal silica. The solution containing the colloidal silica was homogenized by physical agitation using a stirring rod for several minutes before adding H2O2 as the oxidizer.

TABLE 11ComponentConcentrationH2O21%Amino Acid2%1,2,4-Triazole500 ppmColloidal SiO20.1% Deionized WaterBalance

[0106]The formulation numbers and particular amino acids used in each of the formulations are listed below in Table 12. Table 12 lists the formula number, the particular amino acid used and the rate of removal of the copper for a one ...

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Abstract

Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present patent application is a continuation application of U.S. patent application Ser. No. 12 / 213,141 filed on Jun. 16, 2008; which is a divisional application of U.S. patent application Ser. No. 10 / 744,285 filed on Dec. 23, 2003; which claims the benefit of the filing date of Provisional U.S. Patent Application No. 60 / 437,826 filed on Jan. 3, 2003. The entire disclosure of Ser. No. 12 / 213,141 U.S. patent application is incorporated into the present patent application by reference.FIELD OF THE INVENTION[0002]The invention is directed to compositions for use in planarizing a metal surface applied over a dielectric layer, metal layer, or semi-conductor layer, primarily in connection with the manufacture of integrated circuits. The invention also is directed to methods used in effecting the planarization of the metal surface.[0003]Chemical-mechanical planarization (CMP) is used extensively as a processing step in various planar fabrica...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/321C09K3/14C09G1/02H01L21/768B24B37/04
CPCH01L21/3212H01L21/7684B24B37/044C09G1/02C09K3/1463C09K3/14
Inventor CHANG, SONG Y.EVANS, MARKTAMBOLI, DNYANESH CHANDRAKANTHYMES, STEPHEN W.
Owner VERSUM MATERIALS US LLC
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