Methods for forming the isolation structure of the semiconductor device and semiconductor devices

Abstract

A method for forming an isolation structure of a semiconductor device is provided. The method includes forming a patterned dielectric structure in a first area and a second area of a substrate; forming a first isolation structure in the first area and forming a second isolation structure in the second area of the substrate; forming a cap layer over the first area and the second area of the substrate and performing an etching process to etch the cap layer of the second area completely; and performing an oxidation process on the second area to form a first oxide region over the second isolation structure and under the bottom surface of the patterned dielectric structure of the second area.

Description

BACKGROUND OF THE INVENTIONField of the Invention[0001]The present invention relates to semiconductor devices, and in particular to methods for forming the isolation structure of the semiconductor device.Description of the Related Art[0002]High-voltage semiconductor devices are applied to integrated circuits with high voltage and high power. Traditional high-voltage semiconductor devices, for example a vertically diffused metal oxide semiconductor (VDMOS) or a laterally diffused metal oxide semiconductor (LDMOS), are mainly used for devices with at least 18 volts or higher. The advantages of high-voltage device technology include cost effectiveness and process compatibility. High-voltage device technology has been widely used in display driver IC devices and power supply devices, and in the fields of power management, communications, automation, industrial control, etc.[0003]Although semiconductor devices that currently exist are sufficient to meet their original intended use, they ...

AI Technical Summary

Benefits of technology

The patent provides a method for creating isolation structures in a semiconductor device. The method involves forming patterned elastic structures in the substrate, followed by a cap layer and etching process. The resulting device also includes a first oxide region with a different second curvature, which is used to create a metal gate electrode. The technical effect of this patent is to provide a more robust and reliable semiconductor device with improved isolation structures and better performance.

Problems solved by technology

Although semiconductor devices that currently exist are sufficient to meet their original intended use, they are not satisfactory in all respects.

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