Method of manufacturing reflective mask blank, reflective mask blank, and method of manufacturing reflective mask
a reflective mask and blank technology, applied in the field of reflective mask blanks, can solve the problems of increased risk of particle defects in the resulting reflective mask blank, inability to expect high accuracy in position determination, etc., and achieve the effects of accurate grasping, avoiding defects, and reducing the influence of multilayer reflection film defects
Active Publication Date: 2021-03-18
SHIN ETSU CHEM IND CO LTD
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The patent text describes a method to accurately find and locate defects in a reflective mask made from a blank. By using an absorber film, the position of the defect can be pinpointed. This allows for the efficient manufacturing of an effective absorber pattern that can help mitigate the impact of the defect. Overall, this method ensures high accuracy in the manufacturing process of reflective masks.
Problems solved by technology
In the case that the reference mark deeply buried in the films, it cannot be expected to high accuracy in determination of position.
In particular, if the reference mark is formed in the multilayer reflection film at this stage by engraving, risk of particle defects is increased in the resulting reflective mask blank.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
example 1
[0102]First, a substrate was prepared and a conductive film (20 nm thick) composed of Cr-based material was formed on another main surface of the substrate. Next, a cross mark shown in FIG. 3A was formed in each of the four mark-formation areas of the conductive film shown in FIG. 4 as a coordinate reference mark. The coordinate reference mark was a concave mark having a depth of 20 nm formed by etching and removing the conductive film by means of a photolithography. The width of the line was 2 μm, and the lengths of the crossed lines were 100 μm, respectively.
[0103]Next, after cleaning the substrate, a multilayer reflection film (280 nm thick) including 40 molybdenum (Mo) layers and 40 silicon (Si) layers that were laminated alternately were formed on one main surface of the substrate. Further, a protection film (2.5 nm thick) composed of a material containing ruthenium as a main component was formed on the multilayer reflection film.
[0104]Next, defect inspection was conducted to t...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-166813 filed in Japan on Sep. 13, 2019, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates to a reflective mask blank and a method of manufacturing thereof, and particularly relates to a reflective mask blank suitable for manufacturing a reflective mask with reduced phase defects and a method for manufacturing thereof. The present invention also relates to a method of manufacturing a reflective mask with reduced phase defects using the reflective mask blank.BACKGROUND ART[0003]In a manufacturing process of a semiconductor device, a photolithography technique in which a circuit pattern formed on a transfer mask is transferred onto a semiconductor substrate (semiconductor wafer) through a reduction projection optical system with irradiating exposure light to the mask is use...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G03F1/24
CPCG03F1/24G03F1/54G03F1/80G03F1/72G03F1/42G03F1/84G03F1/38G03F1/50G03F1/70G03F1/22G03F1/52
Inventor TERASAWA, TSUNEOKANEKO, HIDEOINAZUKI, YUKIOKOSAKA, TAKURO
Owner SHIN ETSU CHEM IND CO LTD