Chemical vapor deposition process for forming a silicon oxide coating

Abstract

A chemical vapor deposition process for forming a silicon oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes a silane compound, a first oxygen-containing molecule, a radical scavenger, and at least one of a phosphorus-containing compound and a boron-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted over the glass substrate to form a silicon oxide coating on the glass substrate at a deposition rate of 150 nm*m / min or more.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is claiming the benefit, under 35 U.S. C. 119(e), of the U.S. provisional patent application which was granted Ser. No. 62 / 552,713 and filed on Aug. 31, 2017, the entire disclosure of which is hereby incorporated by reference.BACKGROUND[0002]The invention relates in general to a process for forming a silicon oxide coating.[0003]In particular, the invention relates to a chemical vapor deposition (CVD) process for forming a silicon oxide coating over a glass substrate. The invention also relates to a coated glass article having the silicon oxide coating formed thereon.[0004]Silicon oxide coatings are known to be deposited on glass substrates. However, the processes known for the production of the silicon oxide coatings are limited by the efficiency of the deposition process and / or by powder formation (pre-reaction) of the reactive elements. Therefore, it is desired to devise an improved process for the formation of a silicon...

AI Technical Summary

Benefits of technology

The patent describes a chemical vapor deposition process for forming a silicon oxide coating on a glass substrate. The process involves using a gas mixture containing a silane compound, a first oxygen-containing molecule, a radical scavenger, and either a phosphorus-containing compound or a boron-containing compound. The gas mixture is directed towards and along the glass substrate and reacted over the substrate to form the silicon oxide coating. The process has a high deposition rate of 150 nm*m / min or more. The glass substrate can be a glass ribbon in a float glass manufacturing process or at a temperature between 1100° F and 1400° F. The gas mixture can contain more than 0.7 mol% phosphorus-containing compound or more than 1 mol% boron-containing compound. The ratio of phosphorus-containing compound to silane compound can be 1:100 or more, and the ratio of boron-containing compound to silane compound can be 1:1 or more. The gas mixture can also contain a second oxygen-containing molecule. The silicon oxide coating is pyrolytic and has a deposition rate of 175 nm*m / min or more.

Problems solved by technology

However, the processes known for the production of the silicon oxide coatings are limited by the efficiency of the deposition process and / or by powder formation (pre-reaction) of the reactive elements.

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