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Overvoltage protection device and manufacturing process for the same

a protection device and manufacturing process technology, applied in semiconductor devices, semiconductor/solid-state device details, diodes, etc., can solve the problems of reducing the current carrying capacity of the device, affecting and still having drawbacks of the overvoltage protection device. , to achieve the effect of improving the sensitivity of the protection device for overvoltage surg

Active Publication Date: 2006-10-31
DIODES TAIWAN S A R L
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention provides an overvoltage protection device and a manufacturing process for it. The device has a voltage-limiting region that helps it produce a transverse junction breakdown, which can be adjusted to control the breakdown voltage and breakover current. The manufacturing process involves forming a first shading layer, etching it to create shading blocks, and then sequentially adding other layers to create the voltage-limiting region and the emitter region. The technical effects of this invention include improved sensitivity for overvoltage surges and a more efficient manufacturing process."

Problems solved by technology

However, in application, this overvoltage protection device still has drawbacks.
Since it employs a single buried region with relative small size, its conductivity will be limited during the on status.
Hence, it will cause a bottleneck effect, which will lower the current carrying capacity of the device.

Method used

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  • Overvoltage protection device and manufacturing process for the same
  • Overvoltage protection device and manufacturing process for the same
  • Overvoltage protection device and manufacturing process for the same

Examples

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Effect test

first embodiment

[0027]Reference is made to FIG. 4A, which is a top-view diagram of the overvoltage protection device in accordance with the present invention. The upper portion of the semiconductor substrate 30 is surrounded by a circular voltage-limiting region 33a made of an N-type semiconductor. There is a gap located between the voltage-limiting region 33a and the base region 32 made of a P-type semiconductor. The emitter region 34 is disposed inside the base region 32. The multiple holes shown in the figure are emitter shorting dots 35. The emitter region 34 has a first electrode region 31 disposed thereon. In general, the first electrode region 31 is a metal layer used to connect with other components.

second embodiment

[0028]Reference is made to FIG. 4B, which is a top-view diagram of the overvoltage protection device in accordance with the present invention. The hatching 40 shown in this figure corresponds to the cutaway view shown in FIG. 3. The components of the present invention can be modified according to the practical requirements.

[0029]Therein, the upper portion of the semiconductor substrate 30 is surrounded by a semicircular voltage-limiting region 33b made of an N-type semiconductor. There is a gap located between the voltage-limiting region 33b and the base region 32 made of a P-type semiconductor. The emitter region 34 is disposed inside the base region 32 and has the multiple emitter shorting dots 35. The emitter region 34 has the first electrode region 31 disposed thereon.

third embodiment

[0030]Reference is made to FIG. 4C, which is a top-view diagram of the overvoltage protection device in accordance with the present invention. The hatching 40 shown in this figure corresponds to the cutaway view shown in FIG. 3. The present invention can be modified according to the practical requirements.

[0031]Therein, the upper portion of the semiconductor substrate 30 is surrounded by a semicircular segmented voltage-limiting region 33c made of an N-type semiconductor. There is a gap located between the voltage-limiting region 33c and the base region 32 made of a P-type semiconductor. The emitter region 34 is disposed inside the base region 32 and has the multiple emitter shorting dots 35. The emitter region 34 has the first electrode region 31 disposed thereon.

[0032]Taking FIG. 4C as an example, using segmented voltage-limiting region not only can reduce the total length of this voltage-limiting region but also can equally distribute the breakdown phenomenon to a longer length a...

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Abstract

An overvoltage protection device has a voltage-limiting region parallel to its central junction to produce a transverse junction breakdown. The spacing between the voltage-limiting region and the central junction defines the breakdown voltage. Via varying the size and location of the voltage-limiting region, the protection device can has various-breakdown voltages and lower breakover currents. Thereby, the sensitivity of the protection device can be improved.

Description

FIELD OF THE INVENTION[0001]The present invention is directed to an overvoltage protection device and manufacturing process for the same, and more particularly, to an overvoltage protection device having a voltage-limiting region disposed on a central contacting surface thereof for defining the breakdown voltage and breakover current. Thereby, the present invention can make the overvoltage protection device capable of adjusting the breakdown voltage and breakover current.BACKGROUND OF THE INVENTION[0002]Recently, the manufacturing processes for electronic components are more and more precise and their sizes also have become smaller and smaller. Hence, the devices used to protect electronic components from the damage resulting from electric effects, such as static electricity, overvoltage, electric arc and so on, also become more and more important. For instance, the thyristor overvoltage protection devices are used in the modern communication systems extensively. These devices are u...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/331H01L29/06H01L29/32H01L29/747H01L29/87
CPCH01L29/0692H01L29/747H01L29/87
Inventor TSENG, CHING CHIU
Owner DIODES TAIWAN S A R L
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