Solid-state imaging device
a solid-state imaging and imaging device technology, applied in the direction of picture signal generators, television systems, radioation controlled devices, etc., can solve the problems of difficult to make microstructural refinement compatible with realization of a wide region, difficulty in realizing microstructural refinement with a shorter wavelength than the wavelength of light, etc., to achieve high image quality
Inactive Publication Date: 2009-11-17
FUJIFILM CORP
View PDF7 Cites 15 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The invention is a solid-state imaging device that can achieve both a wide dynamic range and high image quality. It includes pixels with multiple photoelectric conversion devices, where the sensitivity difference between them allows for a sensitivity difference in photoelectric conversion sensitivity. The device also has different wavelength regions for light detection, and the ratio of red, green, and blue pixels can be adjusted to achieve the desired image quality. The on-substrate photoelectric conversion device has a higher external quantum efficiency, and the organic material used in the device can include a hole transporting organic material and an electron transporting organic material. The invention also provides a method for synthesizing signals from different light receiving areas in a pixel. Overall, the invention provides a solution for achieving both a wide dynamic range and high image quality in a solid-state imaging device.
Problems solved by technology
More microstructural refinement is fraught with difficulty, and at the same time, microstructural refinement with a shorter size than the wavelength of light is actually impossible.
However, this method requires an amplification circuit of a wide region, and it is very difficult to make it compatible with realization of a wide region following an increase of the number of pixels.
From these factors, the existing solid-state imaging devices involved a theoretical problem that it is very difficult to make realization of a wide dynamic range and realization of a high image quality compatible with each other.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031]Embodiments of the invention are hereunder described with reference to the accompanying drawings.
[0032]FIG. 1 is a surface schematic view to show a configuration of a solid-state imaging device for explaining an embodiment of the invention.
[0033]A solid-state imaging device as illustrated in FIG. 1 is provided with numerous pixels (a pixel 100, a pixel 200 and a pixel 300) on the same plane. The numerous pixels are arrayed such that a line composed of plural pixels arrayed in a line direction on the same plane is designated as a pixel line; an arrangement in which this pixel line is arrayed in large numbers in a row direction on the same plane, or a row composed of plural pixels arrayed in a row direction is designated as a pixel row; and this pixel row is arrayed in large numbers in a line direction. The numerous pixels are divided into numerous units, with one unit being composed of the pixels 100, 200 and 300 arrayed in the line direction; and one pixel data configuring one...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A solid-state imaging device comprising a plurality of pixels arrayed on a plane, wherein each of the pixels includes a semiconductor substrate and a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices include at least one on-substrate photoelectric conversion device stacked in an upper portion of the semiconductor substrate and at least one in-substrate photoelectric conversion device provided within the semiconductor substrate in a lower portion of the on-substrate photoelectric conversion device, and the plurality of photoelectric conversion devices have a different photoelectric conversion sensitivity from each other.
Description
FIELD OF THE INVENTION[0001]The present invention relates to a solid-state imaging device having a plurality of pixel arrayed in the same plane.BACKGROUND OF THE INVENTION[0002]As a prototype of a photoelectric conversion element stack type solid-state imaging device, for example, there are solid-state imaging devices described in JP-A-58-103165, Japanese Patent No. 3405099 and JP-A-2002-83946. Such a solid-state imaging device is configured such that three photosensitive layers are stacked in an upper portion of a semiconductor substrate and that respective red (R), green (G) and blue (B) electric signals detected in the respective photosensitive layers are read out by an MOS circuit formed on a surface of the semiconductor substrate.[0003]Solid-state imaging devices having such a configuration were proposed in the past. Thereafter, a single plate CCD type image sensor or CMOS type image sensor in which not only a number of light receiving parts (photodiodes) are integrated in a su...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(United States)
IPC IPC(8): H01L31/113H01L31/062H01L27/146H01L27/30H01L31/10H04N23/12H04N25/00
CPCH01L27/14603H01L27/307H01L27/14647H10K39/32
Inventor ARAKI, YASUSHI
Owner FUJIFILM CORP