Enclosed nanotube structure and method for forming
a nanotube and enclosed technology, applied in the direction of digital storage, diodes, instruments, etc., can solve the problems of device formation on electrical structures that are typically not protected and devices that malfunction
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[0041]FIGS. 1A-1L illustrate and detail stages in a fabrication process of a semiconductor structure 2, in accordance with embodiments of the present invention. The semiconductor structure 2 illustrated in FIGS. 1A-1L is a cross sectional view. The fabrication process described with respect to FIGS. 1A-1L illustrates the formation of a non-volatile electro / mechanical memory structure (e.g., a nanotube random access memory (NRAM) structure) comprising an enclosed nanotube structure 20 within the semiconductor structure 2 (see completed semiconductor structure 2 in FIG. 1L).
[0042]In FIG. 1A, the semiconductor structure 2 is provided for the fabrication process, in accordance with embodiments of the present invention. The semiconductor structure 2 comprises a substrate 5 with a first electrode layer 7 formed over the substrate 5, a second electrode layer 9 formed over the first electrode layer 7, a mandrel layer 11 formed over the second electrode layer 9, and a photo resist layer 14 f...
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