Display device
a technology of a display device and a display screen, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical devices, etc., can solve the problems of inability to achieve the effect of reducing the size of the channel, affecting the properties of transistors and diodes, and not being practical in the whole process. , to achieve the effect of increasing the film thickness of the photoresist pattern, high precision and controlling the channel siz
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0079]FIGS. 3A to 3H are schematic diagrams showing part of the manufacturing process for a reverse stagger type thin film transistor formed in a liquid crystal display panel. Thin film transistors are not only used as active elements in pixels in the display region, but also as peripheral circuit elements in the non-display region. FIGS. 3A to 3H show a thin film transistor for use in a pixel as an active element, together with the peripheral structure. Here, in FIGS. 3A to 3H, the diagrams on the left are plan diagrams and the diagrams on the right are cross sectional diagrams along line X-X′ in the plan diagrams.
[0080]In the following, the descriptions follow the order of the steps.
Step 1 (FIG. 3A)
[0081]First, gate signal lines 14 are formed on a glass substrate 13 from a metal in accordance with a publicly known film formation technology, photolithography technology, etching technology and photoresist pattern removing technology. Part of these gate signal lines 14 functions as a...
second embodiment
[0097]FIGS. 5A to 5G are schematic diagrams showing part of the manufacturing process for a resistor element. The resistor element is formed in the non-display region of the display device as an electrostatic protective circuit element, for example.
[0098]In the following, the steps are described in order.
Step 1 (FIG. 5A)
[0099]First, an insulating film 26, a silicon film 27, a doped silicon film 28 and a metal film 29 are formed on top of a glass substrate 25 in sequence. The insulating film 26 is the same as the above described insulating film 15. The main component of the silicon film 27 and the doped silicon film 28 is the same as in the above described silicon film 16 and the doped silicon film 17, respectively. The metal film 29 is the same as the above described metal film 18.
Step 2 (FIG. 5B)
[0100]Next, as in FIG. 3C, a photoresist pattern 30a, 30b and 30c is formed in an upper layer of the metal film 29. At this time, pieces of the photoresist pattern 30c are located between p...
third embodiment
[0107]FIGS. 6A to 6H are diagrams showing other embodiments of the present invention, and correspond to FIG. 1A.
[0108]The electrodes and the dummy electrodes in FIGS. 6A to 6H are different from those in FIG. 1A in a plane. In FIGS. 6A to 6H, 33 is a semiconductor layer pattern, 32a and 32b are electrodes, and 32c is a dummy electrode pattern.
[0109]In FIG. 6A, the above described dummy electrode pattern 32c is formed so as to include dummy electrodes of which the two ends protrude in one direction in which electrodes are aligned from the center.
[0110]In this case, the above described dummy electrodes form the dummy electrode pattern 32c, where the intervals between adjacent electrodes (including the dummy electrodes) are kept approximately constant in the longitudinal direction of the dummy electrodes. In addition, the electrodes 32a and 32b have such a form as to have a constant interval with adjacent dummy electrodes. This is the same for the dummy electrode pattern 32c and the pa...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More