Sputtering apparatus

Abstract

Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

Description

CLAIM OF PRIORITY[0001]This application makes reference to, incorporates the same herein, and claims all benefits accruing under 35 U.S.C. §119 from an application earlier filed in the Korean Intellectual Property Office on 24 Nov. 2009 and there duly assigned Serial No. 10-2009-0113887.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]An aspect of the present invention relates to a sputtering apparatus for depositing an extremely low concentration of a metal catalyst on an amorphous silicon layer in order to crystallize the amorphous silicon, and more particularly, to a sputtering apparatus capable of minimizing non-uniformity of a metal catalyst caused by a pre-sputtering process without reducing process efficiency, and thus improving uniformity of the metal catalyst deposited on an amorphous silicon layer at an extremely low concentration.[0004]2. Description of the Related Art[0005]Flat panel display devices have replaced cathode ray tube display devices due to cha...

AI Technical Summary

Benefits of technology

[0012]Aspects of the present invention provide a sputtering apparatus, which is configured to move a metal target without using a magnetic assembly in order to prevent magnetization of a metal catalyst and to deposit the metal catalyst at an extremely low concentration. The sputtering apparatus is capable of minimizing non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency, and thus improving uniformity of the metal catalyst deposited on an amorphous silicon layer at an extremely low concentration.

Problems solved by technology

However, the crystallizing method using the metal degrades the characteristics of the TFT when the metal catalyst remains in the poly-Si formed by crystallizing the a-Si, and particularly, the TFT may be driven unstably when the metal catalyst remaining in the poly-Si is magnetized.

Further, it takes a predetermined time to form or remove the separate shield depending on progress of the pre-sputtering process, so that the deposition process is delayed, and thus overall process efficiency is reduced.