Method for producing thick film photoresist pattern
a technology of photoresist and thick film, applied in the direction of microlithography exposure apparatus, photomechanical equipment, instruments, etc., can solve the problem that the photoresist composition is prone to bubble entrainment (generation of bubbles over the surface of the photoresist layer)
Active Publication Date: 2016-01-26
TOKYO OHKA KOGYO CO LTD
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Benefits of technology
The invention helps prevent bubbles from getting into the thick film photoresist pattern during production.
Problems solved by technology
However, the chemically amplified positive-type photoresist composition for thick film as disclosed in Patent Document 3 has been found to have a problem that when the photoresist composition is used to produce a thick film photoresist pattern having a film thickness of no less than 30 μm, the photoresist composition is prone to bubble entrainment (generation of bubbles over a surface of the photoresist layer) during its application or prebaking after the application.
Method used
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examples
[0172]Examples of the present invention are described below; however, the scope of the invention is not intended to be limited by these examples.
Evaluation of Solvent
[0173]For the respective organic solvents, 2.5 μL of a droplet was prepared, the droplet was contacted with a silicon substrate, a contact angle immediately after the contact was measured three times using a FACE contact angle meter (Kyowa Interface Science; model CA-X150), and the average value of the measurements was calculated. The contact angle and the boiling point at atmospheric pressure are shown in Table 1.
[0174]
TABLE 1organic solventboiling point (° C.)contact angle (°)MA17215.3HP15012.9PGMEA14618.4PGME11920.0EL15420.6CH15620.5BA12614.1MA: 3-methoxybutyl acetateHP: 2-heptanonePGMEA: propylene glycol monomethyl ether acetatePGME: propylene glycol monomethyl etherEL: ethyl lactateCH: cyclohexanoneBA: butyl acetate
[0175]Of the organic solvents shown in Table 1, MA and HP fall under the organic solvent having a boi...
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Abstract
A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.
Description
[0001]This application claims priority under 35 U.S.C. §119(a)-(d) to Japanese Patent Application No. 2011-276382, filed on Dec. 16, 2011, the entire content of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method for producing a thick film photoresist pattern.[0004]2. Related Art[0005]Photofabrication is now the mainstream of a microfabrication technique. Photofabrication is a generic term describing the technology used for manufacturing a wide variety of precision components such as semiconductor packages. The manufacturing is carried out by applying a photoresist composition to the surface of a processing target to form a photoresist layer, patterning this photoresist layer using photolithographic techniques, and then conducting chemical etching, electrolytic etching, and / or electroforming based mainly on electroplating, using the patterned photoresist layer (photoresist pattern) as a m...
Claims
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IPC IPC(8): G03F7/20G03F7/04G03F7/004
CPCG03F7/20G03F7/0045G03F7/0048G03F7/0392
Inventor WASHIO, YASUSHIANDO, TOMOYUKISHIMURA, EIICHITACHI, TOSHIAKI
Owner TOKYO OHKA KOGYO CO LTD