Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

Abstract

Embodiments of the present invention enable threshold voltage distribution of a plurality of electrode layers to be improved by configuring each of the plurality of electrode layer maintains to have different physical structures or materials, etc., thereby enhancing credibility during a process of maintaining stores data and a reading process.

Description

TECHNICAL FIELD[0001]Embodiments of the present invention relate to a three dimensional flash memory using electrode layers and / or interlayer insulation layers having different properties, and a preparation method thereof, and more particularly, relate to a three dimensional flash memory with an improved threshold voltage distribution of a plurality of electrode layers and a uniform stress level of a plurality of interlayer insulation layers by differentiating the plurality of electrode layers or the plurality of interlayer insulation layers in properties, and a preparation method thereof.BACKGROUND ART[0002]Flash memory devices are Electrically Erasable Programmable Read Only Memory (EEPROM). Flash memories may be widely employed, for example, in computers, digital cameras, MP3 players, game systems, memory sticks, and so on. The flash memory devices electrically control data to be input or output in the mechanism of Fowler-Nordheim (FN) tunneling effect or hot electron injection.[...

AI Technical Summary

Benefits of technology

[0021]Embodiments of the present invention may provide a three dimensional flash memory with an improved threshold voltage distribution of a plurality of electrode layers by differentiating the plurality of electrode layers in physical structures or materials, and a preparation method thereof. Accordingly, it may be allowable to improve credibility of data stored in the three dimensional flash memory.

[0022]Embodiments of the present invention may also provide a three dimensional flash memory with a uniform stress level of interlayer insulation layers by differentiating the interlayer insulation layers, as well as a plurality of electrode layers, in physical structures or materials, and a preparation method thereof.

Problems solved by technology

However, there is a limit in highly raising integration density of cell transistors within a defined horizontal area.

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