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Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

a three-dimensional flash memory and interlayer insulation technology, applied in the direction of electrical equipment, semiconductor devices, instruments, etc., can solve the problem of limiting the integration density of cell transistors within a defined horizontal area, and achieve the effect of improving the threshold voltage distribution and improving the credibility of data stored

Active Publication Date: 2018-03-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Embodiments of the present invention provide a three-dimensional flash memory with improved data storage and a uniform stress level of interlayer insulation layers. This is achieved by differentiating the physical structures or materials of the plurality of electrode layers and interlayer insulation layers. The technical effects include improved reliability and credibility of data stored in the three-dimensional flash memory.

Problems solved by technology

However, there is a limit in highly raising integration density of cell transistors within a defined horizontal area.

Method used

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  • Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor
  • Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor
  • Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

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Embodiment Construction

Technical Problem

[0006]Embodiments of the present invention provide a three dimensional flash memory with an improved threshold voltage distribution of a plurality of electrode layers by differentiating the plurality of electrode layers in physical structures or materials, and a preparation method thereof.

[0007]Embodiments of the present invention also provide a three dimensional flash memory with a uniform stress level of interlayer insulation layers by differentiating the interlayer insulation layers, as well as a plurality of electrode layers, in physical structures or materials.

TECHNICAL SOLUTION

[0008]A three dimensional flash memory according to an embodiment of the present invention may include: a channel layer; a plurality of electrode layers connected with the channel layer and stacked vertically; and a plurality of interlayer insulation layers connected with the channel layer, disposed alternately with the plurality of electrode layers, and stacked vertically, wherein the p...

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Abstract

Embodiments of the present invention enable threshold voltage distribution of a plurality of electrode layers to be improved by configuring each of the plurality of electrode layer maintains to have different physical structures or materials, etc., thereby enhancing credibility during a process of maintaining stores data and a reading process.

Description

TECHNICAL FIELD[0001]Embodiments of the present invention relate to a three dimensional flash memory using electrode layers and / or interlayer insulation layers having different properties, and a preparation method thereof, and more particularly, relate to a three dimensional flash memory with an improved threshold voltage distribution of a plurality of electrode layers and a uniform stress level of a plurality of interlayer insulation layers by differentiating the plurality of electrode layers or the plurality of interlayer insulation layers in properties, and a preparation method thereof.BACKGROUND ART[0002]Flash memory devices are Electrically Erasable Programmable Read Only Memory (EEPROM). Flash memories may be widely employed, for example, in computers, digital cameras, MP3 players, game systems, memory sticks, and so on. The flash memory devices electrically control data to be input or output in the mechanism of Fowler-Nordheim (FN) tunneling effect or hot electron injection.[...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/792H01L27/11582H01L27/1157G11C16/04H10B69/00H10B43/27H10B43/35
CPCH01L27/11582H01L27/1157G11C16/0483G11C16/0466H10B43/35H10B43/27H10B41/30
Inventor SONG, YUN HEUB
Owner SAMSUNG ELECTRONICS CO LTD
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