Semiconductor device
a semiconductor chip and semiconductor technology, applied in the direction of pulse technique, electronic switching, basic electric elements, etc., can solve the problems of large chip area affecting production costs, high production cost, and high cost of semiconductor chips per unit area
Active Publication Date: 2018-03-27
DENSO CORP
View PDF16 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The present disclosure provides a semiconductor device that can measure temperature without using a temperature-sensitive diode. The device includes a first power semiconductor element, a second power semiconductor element connected in parallel with the first element, a voltage changing unit that changes voltage applied to a control terminal of the first element when the second element is turned on, a detecting unit that detects a current flowing in the first element when the voltage changing unit has changed voltage applied to the control terminal, and a temperature estimating unit that estimates the temperature of the first element based on the characteristic of the current flowing in the first element with respect to the change of voltage applied to the control terminal. The device is simple in structure and avoids complicated production processes, reducing production costs.
Problems solved by technology
In regard to this point, when a wide band gap semiconductor, such as SiC, is used as a semiconductor material, the cost of the semiconductor chip per unit area is increased.
Namely, the increase of the chip area largely affects the production costs.
Therefore, a production process is likely to be complicated, resulting in the increase of the production costs.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0016]Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings.
[0017]As shown in FIG. 1, a semiconductor device 1 of the present embodiment includes, as a power semiconductor element, a field effect transistor (hereinafter referred to as FET) 14 and an insulated gate bipolar transistor (hereinafter referred to as IGBT) 12. The FET 14 corresponds to a first power semiconductor element, and the IGBT 12 corresponds to a second power semiconductor element. The FET 14 and the IGBT 12 are connected in parallel. That is, an emitter of the IGBT 12 and a source of the FET 14 are connected to each other, and a collector of the IGBT 12 and a drain of the FET 14 are connected to each other.
[0018]A basic structure of the IGBT 12 is, as well-known, that a p+ layer is added to a drain side of an n-channel MOSFET, for example. Therefore, when the IGBT 12 is turned on, conductivity modulation in which holes are injected from the added p+ layer to ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A semiconductor device includes: a first power semiconductor element; a second power semiconductor element that is connected in parallel with the first power semiconductor element; a voltage changing unit that changes a voltage applied to a control terminal of the first power semiconductor element when the second power semiconductor element is turned on; a detection unit that detects a current flowing in the first power semiconductor element when the voltage changing unit has changed the voltage applied to the control terminal of the first power semiconductor element; and a temperature estimation unit that estimates a temperature of the first power semiconductor element based on a characteristic of the change of the current of the first power semiconductor element with respect to a change of the voltage applied to the first power semiconductor element.
Description
CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a U.S. national stage of International Patent Application No. PCT / JP2016 / 002253 filed on May 7, 2016 and is based on Japanese Patent Application No. 2015-107448 filed on May 27, 2015, the disclosure of which is incorporated herein by reference.TECHNICAL FIELD[0002]The present disclosure relates to a semiconductor device having a first power semiconductor element and a second power semiconductor element, which are connected in parallel with each other.BACKGROUND ART[0003]For example, as described in patent literature 1, it has been known a semiconductor device that has a temperature-sensitive diode in a semiconductor chip so as to measure the temperature of the semiconductor chip.PRIOR ART LITERATUREPatent Literature[0004]Patent Literature 1: JP 2008-172132 ASUMMARY OF INVENTION[0005]In a case where the temperature is measured using a temperature-sensitive diode, a semiconductor chip needs to have the temperature-sensit...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/822H01L27/04H01L25/07H01L25/18H03K17/08H01L23/34
CPCH01L23/34H01L21/822H01L25/07H01L27/04H03K17/08H01L25/18H01L2924/0002H01L2224/40137H03K17/127H03K2017/0806
Inventor KAKIMOTO, NORIYUKI
Owner DENSO CORP