1-T memory structure with concealed renewing memory function and its operation method

An operation method and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as data loss

Inactive Publication Date: 2007-09-05
TAIWAN SEMICON MFG CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Another object of the present invention is to provide a 1-T memory structure with a hidden update memory function and its operation method, which uses a parallel electrical path design and cooperates with a simple operation logic algorithm (algorithm) to reduce the operation time. complexity, and to solve the problem of data loss caused by conflicts

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  • 1-T memory structure with concealed renewing memory function and its operation method
  • 1-T memory structure with concealed renewing memory function and its operation method
  • 1-T memory structure with concealed renewing memory function and its operation method

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Embodiment Construction

[0048] In order to make the above-mentioned and other purposes, features, and advantages of the present invention more obvious, a preferred embodiment is specifically cited below, together with the accompanying drawings, and described in detail as follows:

[0049]Referring to FIG. 2, the 1-T memory structure of the present invention is shown. In FIG. 2, the structure includes a memory array MAT, a sense amplifier bank SAB, a sense amplifier selector SAS, a shared data latch SDL, a row selector YS and a switch S. As shown in FIG. 2 , in this configuration, a memory working unit is a configuration in which a memory array MAT is matched with a sense amplifier bank SAB and combined with a sense amplifier selector SAS before and after each, such as MAT i, SAB and two MAT_SEL i. The selector SAS respectively selects to use the local I / O bus LIO or use the bit line as the conflict processing path according to the periodic signal ACCESS_MISS or ACCESS_HIT. In addition, the two memo...

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Abstract

The storage structure comprises the multiple memory arrays, multiple sensing amplifiers, a selector, a shared type data latch. The method for operating the storage structure includes following steps. The addresses, where the conflicts of accessing and updating requirements happen, are compared to determine whether the addresses are in the same memory array. If yes, then the present working mode is decided. If it is in the data accessing cycle mode, then data signals are updated through the sensing amplifier at same time and data signals are accessed through the shared data latch; if it is in the data updating cycle mode, then the data signal needed to update are stored in the shared type data latch, and the updated data are stored back to the original memory array by using the stealing technique after the operation of accessing data is completed.

Description

technical field [0001] The present invention relates to a 1-T memory structure with a hidden update memory function and its operation method. It uses a data latch and adopts the design of parallel electrical paths to effectively solve the problem of traditional access and update operations. The problem of data loss caused by conflicts. Background technique [0002] FIG. 1 is a schematic diagram of a unit of cell circuit in a typical 1-Transistor memory. In FIG. 1, there is a 1-transistor gate (1-Transistor gate) G1T component and a capacitor Cap. As shown in FIG. 1, when the gating signal WL turns on the TFT component, the power supply from the data driver (not shown) will be sent to the capacitor Cap through the bit selection signal line BL, so that the capacitor Cap will be charged to saturation (saturation) ). However, as time goes by, the data signal stored in this 1-T memory will disappear with time, that is, the charge stored in the capacitor will gradually disappea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/401G11C11/406
Inventor 周延平
Owner TAIWAN SEMICON MFG CO LTD
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