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Storing device and manufacturing method therefor

A storage device and source line technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of increased storage unit distance, inability to highly integrate components, multi-chip area, etc. The effect of resistance

Inactive Publication Date: 2007-12-05
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method will increase the distance between two adjacent memory cells, occupy more chip area, and make the components unable to be highly integrated.

Method used

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  • Storing device and manufacturing method therefor
  • Storing device and manufacturing method therefor
  • Storing device and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0046] 2A to 2D show top views of the manufacturing method of the memory according to the preferred embodiment of the present invention. 3A to 3D show cross-sectional views of a method of manufacturing a memory according to a first embodiment of the present invention, taken along line IV-IV of FIGS. 2A to 2D . 4A to 4D show cross-sectional views of a method of manufacturing a memory according to a first embodiment of the present invention, taken along line III-III of FIGS. 2A to 2D .

[0047] Referring to FIGS. 2A , 3A, and 4A, an isolation structure 202 is formed on a substrate 200 to define an active region 204 in the substrate 200 . The isolation structure 202 is formed, for example, by a shallow trench isolation method, and is preferably arranged in strips substantially parallel to each other, so as to define a plurality of disconnected strip-shaped active regions 204 in the substrate 200 . Thereafter, a dielectric layer 206 is formed on the substrate 200. The material of...

no. 2 example

[0053] 2A to 2D show top views of the manufacturing method of the memory according to the preferred embodiment of the present invention. 5A to 5D show cross-sectional views of a method of manufacturing a memory according to a second embodiment of the present invention, taken along line IV-IV of FIGS. 2A to 2D . 6A to 6D show cross-sectional views of a method of manufacturing a memory according to a second embodiment of the present invention, taken along line III-III of FIGS. 2A to 2D .

[0054] The technical method of the second embodiment of the present invention is roughly the same as that of the first embodiment, and the biggest difference is that the spacer between the source lines is further removed, so that the space between the memory cells can be effectively reduced.

[0055] 2A, 5A, 6A, the manufacturing method of the storage device according to the second embodiment of the present invention is to form an isolation structure 202, a dielectric layer 206 and a strip-sha...

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Abstract

The memory unit making process includes first forming several pairs of floating grids and several pairs of selecting grids on the active arean of the substrate, with the floating grid pair being between selecting grid pair; then forming dielectric layer on the floating grids and the selecting grids; forming control grids and source lines over the floating grids and the selecting grids and cross these active areas and isolating areas; forming source / drain areas on two sides of the control grids and source lines; covering one thick dielectric layer over the substrate while forming source line contacting windows in the thick dielectric layer for connection with the source / drain areas between source line pair and connecting to at least one of source line pairs.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and more particularly to a storage device and its manufacturing method. Background technique [0002] Flash memory devices have the advantages of being able to store, read, and erase information multiple times, and the stored information will not disappear even after power failure, so it has become a popular choice for personal computers and digital cameras, personal computers, and digital cameras. A non-volatile storage device widely used in electronic devices such as portable electronic notepads. [0003] A currently used flash memory cell is composed of a stacked gate consisting of a floating gate and a control gate, a source / drain, and a selection transistor located on one side of the stacked gate. FIG. 1 shows a top view of a conventional flash memory. Referring to FIG. 1, the control gate 114b, the floating gate (not shown), the select gate 115b and the source...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L21/8239H10B99/00
Inventor 石忠勤
Owner UNITED MICROELECTRONICS CORP