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Plasma processing method and post-processing method
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A plasma and treatment method technology, applied in the field of plasma treatment and post-treatment, can solve the problems of damage to the durability of the system, and the lack of research on the anti-corrosion of the handling system, so as to achieve the effect of preventing corrosion
Inactive Publication Date: 2008-01-02
TOKYO ELECTRON LTD
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Generally speaking, the inner surface of the chamber where corrosive gas is used for etching and other processing is made of aluminum or aluminum oxide film material, so it constitutes a temporary anti-corrosion measure. Deterioration due to corrosion will greatly impair the durability of the entire system
However, so far, little research has been done on the corrosion protection of handling systems
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Embodiment 1 and comparative example 1～3
[0081] Corrosive gases HBr and Cl are used as etching gases 2 While performing the silicon wafer etching process, use O 2 Plasma and NH 3 Plasma post-processing was carried out under varying conditions according to the type of test, and the amount of halogen on the wafer and in the transport path (inside the cassette) was measured. In addition, the etching process and post-processing were performed using the apparatus of the same structure as FIG. 5.
[0082]The test types are as shown in Table 1, respectively evaluated the situation (comparative example 1) without post-treatment, only O 2 In the case of plasma treatment (comparative example 2), only NH 3 In the case of plasma treatment (Comparative Example 3), O 2 NH after plasma treatment 3 Case of plasma treatment (Example 1). As the conditions of the plasma treatment, the etching treatment was performed for 50 seconds, and the post-treatment O 2 Plasma treatment and NH 3 The plasma treatment was performed for 5 sec...
Embodiment 2 and comparative example 4
[0089] Corrosive gas HBr and Cl are used as etching gas 2 While performing the etching process of the silicon wafer, as a post-processing, implement O 2 Plasma treatment and NH 3 After the plasma treatment, wet cleaning was performed on the treated silicon wafer (Example 2).
[0090] For this wet cleaning, a 5% hydrogen fluoride aqueous solution (HF+H 2 O) dilute hydrofluoric acid (Dilute Hydrofluoric Acid, DHF) for 60 seconds of washing. Also, for comparison, only O 2 In the case of plasma treatment, cleaning was also performed with dilute hydrofluoric acid (DHF) under the same conditions (Comparative Example 4).
[0091] An apparatus having the same structure as that shown in FIG. 5 was used for the etching step and post-processing. The plasma treatment time is, the etching treatment is 50 seconds, the post-treatment O 2 Plasma treatment and NH 3 Plasma treatment was 5 s, respectively. Also, as a post-processing only O 2 The time of the plasma treatment of Comparati...
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Abstract
A plasma processing method and a post-processing method can certainly prevent corrosion not only in a processing chamber but also in a transfer system. The plasma processing method for performing a plasma process on an object to be processed in a chamber includes a first plasma process for processing the object to be processed by a first plasma that is generated by plasmarizing a gas containing at least a halogen element; a second plasma process for processing the chamber and the object to be processed by supplying an oxygen-containing gas in the chamber to generate a second plasma after the first plasma process; and a third plasma process for processing the object to be processed after the second plasma process by using a third plasma that is generated by plasmarizing a gas containing at least nitrogen and hydrogen.
Description
technical field [0001] The present invention relates to a plasma processing method and a post-processing method, specifically, a plasma processing method and a post-processing method for etching a semiconductor wafer or the like. Background technique [0002] In the process of dry-etching substrates such as semiconductor wafers with corrosive gases such as hydrogen bromide or chlorine, it is necessary to deal with particles generated by the detachment of reaction products attached to the processing chamber and chamber damage caused by corrosive gases. Corresponding countermeasures are proposed. Therefore, it is proposed to use O after dry etching 2 A plan for plasma cleaning (for example, Patent Document 1). Use the O 2 Plasma cleaning is effective for replacing the halogen gas environment in the chamber and for corrosion protection in the chamber, and it is also expected to have the effect of removing corrosive gas adsorbed on the substrate by spraying. [0003] However...
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