Film semiconductor device, its manufacturing method, electro-optical device, and electronic apparatus

Abstract

The invention provides a manufacturing method of a thin film semiconductor device, a thin film semiconductor device, the electro-optical device of the thin film semiconductor device, and the electronic machine of the thin film semiconductor device; a manufacturing process is not needed to be added, the film thickness of the dielectric film of a capacitance element is caused to be thinner than the film thickness of the gate insulating film of a TFT. When a storage capacitance (70) is formed on a TFT array substrate (10), the impurity is guided in the extension part (1f) of a semiconductor film (1a) from the opening (401a) of an anticorrosion mask (401), at the same time, the surface of a dielectric film (2c) is etched from the opening (401a) of the anticorrosion mask (401). So the manufacturing process does not need to be added, the film thickness of the dielectric film (2c) of the storage capacitance (70) is caused to be thinner than the film thickness of the gate insulating film (2a) of the (TFT30).

Description

technical field [0001] The present invention relates to a thin film semiconductor device (hereinafter referred to as TFT) and a capacitive element on the same substrate, its manufacturing method, an electro-optical device using the thin film semiconductor device as a substrate for an electro-optical device, and an electro-optical device equipped with the same electronic machine. More specifically, it relates to a technique for manufacturing a capacitive element with high capacitance. Background technique [0002] In the case of constituting a thin-film semiconductor device in which the TFT and the capacitive element are on the same substrate, if the TFT semiconductor film and the semiconductor film of the same layer are conductively formed to form the lower electrode, the gate insulating film and the insulating film of the same layer are used to form the dielectric film, and use the gate electrode and the conductive film of the same layer to form the upper electrode, it is ...

AI Technical Summary

Problems solved by technology

[0005] However, when the film thickness of the dielectric film of the capacitive element is different from that of the gate insulating film of the TFT, it is necessary to add a mask to etch the dielectric film of the capacitive element to make it thinner.

Therefore, it is necessary to add a mask forming process and a mask removing process for each process, resulting in inefficiency

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