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Method for making and releasing sacrificial layer by using salient point based on silicon substrate

A sacrificial layer, silicon substrate technology, applied in the process of producing decorative surface effects, coating, manufacturing microstructure devices, etc., can solve the problems of sticking, unsuitable for mass production, and long etching sacrificial layer. , to achieve the effect of preventing adhesion

Inactive Publication Date: 2008-06-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the process of silicon-based surface micromachining, "sacrificial layer" technology is used to manufacture suspended beams, membranes or cavity structures. During the process of releasing the sacrificial layer or after the formation of the sacrificial layer, the upper structure layer is prone to contact with the silicon lining. Bottom sticking phenomenon, the method of etching and depositing bumps in the sacrificial layer is generally used to prevent sticking. As we all know, this method is cumbersome and takes a long time to etch the sacrificial layer, which is not suitable for large-scale production.

Method used

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  • Method for making and releasing sacrificial layer by using salient point based on silicon substrate
  • Method for making and releasing sacrificial layer by using salient point based on silicon substrate
  • Method for making and releasing sacrificial layer by using salient point based on silicon substrate

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Embodiment

[0048] 1. If diagram 2-1 As shown, silicon nitride (SiN) is deposited on a silicon substrate 201 by low-pressure chemical vapor deposition (LPCVD) X ) thin film 202 with a thickness of 2.4-2.6 μm.

[0049] 2. If Figure 2-2 As shown, silicon nitride (SiN X ) film 202 into an inverted trapezoidal window.

[0050] 3. If Figure 2-3 As shown, anisotropically inscribed inverted trapezoidal windows into the silicon substrate.

[0051] 4. If Figure 2-4 As shown, the KOH solution with a concentration of 35%-40% is used to etch silicon under the condition of 80-85° C., and the etching depth is 1.8-2 μm, forming inverted trapezoidal etching pits and triangular bumps 203 .

[0052] 5. If Figure 2-5 As shown, silicon dioxide (SiO2) was deposited on the surface by low-pressure chemical vapor deposition (LPCVD) 2 ) thin film sacrificial layer 204 with a thickness of 1-2 μm.

[0053] 6. If Figure 2-6 shown, with SF 6 Gas, isotropic etching of silicon dioxide (SiO 2 ) thin f...

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Abstract

The invention provides a process for making and releasing sacrificial layer by utilizing silicon substrate projected spots, wherein the procedures are disclosed in the specification.

Description

technical field [0001] The invention belongs to one of the key manufacturing technologies of MEMS in the microelectronic technology, that is, the method of manufacturing and releasing a sacrificial layer based on silicon substrate bumps is adopted. Background technique [0002] In microelectromechanical system (MEMS) manufacturing technology, silicon-based surface micromachining technology is an important part, which avoids vertical bulk silicon deep processing, has better compatibility with integrated circuit technology, and is beneficial to structural devices and processing circuits integration. In the process of silicon-based surface micromachining, "sacrificial layer" technology is used to manufacture suspended beams, membranes or cavity structures. During the process of releasing the sacrificial layer or after the formation of the sacrificial layer, the upper structure layer is prone to contact with the silicon lining. Bottom sticking phenomenon, generally adopts the m...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 石莎莉陈大鹏欧毅谢常青叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI