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Method for controlling key size deviation in chip etching technology

A key dimension deviation and process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor integration, poor real-time performance, and no real-time temperature control, to improve quality and overcome manpower consumption. , the effect of saving measurement time

Active Publication Date: 2008-07-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The disadvantage is that the real-time adjustment is poor, it does not play a role in real-time temperature control, and it is not integrated with online measurement tools, and the integration is poor

Method used

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  • Method for controlling key size deviation in chip etching technology
  • Method for controlling key size deviation in chip etching technology
  • Method for controlling key size deviation in chip etching technology

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Experimental program
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Embodiment 1

[0027] As shown in Figure 3, during the process, the optical CD measurement device 11 is mainly used. The optical CD measurement device 11 can be integrated into the etching equipment. Before etching a silicon wafer, the transmission platform 12 will be sent into the optical The CD value of the silicon wafer is measured in the CD measurement device 11 to obtain the CD value N1, and then the transfer platform transports the silicon wafer to the reaction chamber 14. After the etching is completed, it is sent to the optical CD measurement device 11 again, and its CD value is measured. The value is N2, and N2-N1 can get the deviation value.

[0028] The obtained silicon wafer CD deviation value is sent to industrial computer 13, and its CD deviation uniformity value is analyzed, and the silicon wafer CD deviation uniformity value and figure 2 Fitting and one-to-one correspondence of the temperature curve of the electrostatic chuck 2 to obtain the corresponding information on the t...

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Abstract

The present invention provides a method for controlling critical dimension deviation in wafer etching process. Said method includes the following steps: creating a data list containing correspondent relationship of wafer critical dimension (CD) deviation uniformity and electrostatic chuck inner and outer ring temperatures, regulating on-line tool for measuring CD deviation and making it be used for controlling inner and outer ring temperatures of said electrostatic chuck and making real-time feedback of CD deviation, real-time measuring CD deviation uniformity before etching and after etching, comparing inner and outer temperatures of electrostatic chuck with correspondent data list and regulating inner and outer ring temperatures of next electrostatic chuck so as to make the uniformity of its CD deviation be better.

Description

technical field [0001] The invention relates to the field of semiconductor etching technology, in particular to a method for controlling critical dimension deviation in wafer etching technology. Background technique [0002] In the silicon wafer etching process, it is very important to control the uniformity of CD (critical demension, critical dimension) deviation. The CD deviation is the variation of the line width on the silicon wafer before and after the process. This width reflects the amount of lateral etching. The distribution uniformity of CD deviation on the entire silicon wafer directly affects the performance of silicon wafers. Therefore, it is very important to obtain a good uniformity of CD deviation. The uniformity of CD deviation is related to The temperature of the electrostatic chuck has a very close relationship and is very sensitive to temperature changes. Currently, the off-line CD SEM measurement results are mainly used to obtain the uniformity of the CD...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/66H01L21/00C23F1/12C23F4/00
Inventor 陈卓
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD