Heating chamber and semiconductor processing equipment

Abstract

The present invention relates to a heating chamber and semiconductor processing equipment, the heating chamber comprises a plurality of heating zones, heating units in one-to-one correspondence to the heating zones, a drive unit, a detection unit, a control unit and adjustment units in one-to-one correspondence to the heating units, the drive unit is used for driving the detection unit to move in a plane parallel to a wafer and transmitting a position signal of the detection unit in real time to the control unit, the detection unit is used for detecting in real time the wafer temperature in correspondence to the plurality of heating zones and transmitting the temperature to the control unit, the control unit is used for judging which one of the heating zones, the temperature transmitted by the detection unit belongs to, according to the position signal transmitted by the drive unit and judging whether a bias exists between the temperature and a preset temperature, and if the bias exists between the temperature and the preset temperature, the adjustment unit in correspondence to the heating zone, to which the temperature belongs, is adjusted so as to calibrate the output power of the corresponding heating unit. The heating chamber may improve the heating accuracy and the temperature uniformity and lowers the wafer temperature measurement difficulty.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a heating chamber and semiconductor processing equipment. Background technique [0002] Physical Vapor Deposition (Physical Vapor Deposition, referred to as PVD) technology is the most widely used thin film manufacturing technology in the semiconductor industry. In the field of integrated circuit manufacturing, PVD technology refers more specifically to magnetron sputtering deposition technology, which is mainly used for the deposition of metal films such as aluminum and copper to form metal contacts and metal interconnections. The PVD process generally includes the following steps: 1) degassing step; 2) pre-cleaning step; 3) copper barrier layer step; 4) copper seed layer step. Among them, the degassing step is mainly to heat the wafer in the degassing chamber to remove the moisture and volatile impurities attached to the surface of the wafer. The...

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Problems solved by technology

[0005] However, in practical applications, the following technical problems will inevitably exist in the above method: the temperature of the wafer cannot be obtained in real time during the process, so the temperature of the wafer cannot be controlled in real time, which not only causes poor temperature uniformity of the wafer, but also causes heating The reliability and process quality are poor; and it will also cause when the temperature required by the wafer process or the material of the wafer changes, it is necessary to regain the standard output power before the process, resulting in low process efficiency

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