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Method for controlling growth density of carbon nanometer tube

A carbon nanotube and density technology, which is applied in the field of controlling the growth density of carbon nanotubes, can solve the problems of uneven distribution density of carbon nanotubes and difficulty in controlling the distribution density of catalyst particles, and achieve a controllable and uniform distribution density. Effect

Inactive Publication Date: 2008-08-20
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
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Problems solved by technology

[0006] In order to solve the technical problem that the catalyst particle distribution density is not easy to control during the reduction annealing process of the carbon nanotube catalyst grown by the chemical vapor deposition method, the catalyst is easy to react with the substrate, and thus the distribution density of the grown carbon nanotube is uneven, the present invention provides A method for controlling the growth density of carbon nanotubes

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  • Method for controlling growth density of carbon nanometer tube
  • Method for controlling growth density of carbon nanometer tube
  • Method for controlling growth density of carbon nanometer tube

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Embodiment Construction

[0014] See figure 1 , is a flowchart of the method for controlling the growth density of carbon nanotubes in the present invention. The inventive method comprises the following steps:

[0015] Step 1, providing a substrate. The substrate material includes porous silicon, quartz or metal, etc., and it only needs to be able to withstand the high temperature conditions required by the chemical vapor deposition method for growing carbon nanotubes. This substrate has a flat surface that serves as a support base for subsequent steps.

[0016] Step 2, forming a protective layer on the surface of the substrate. This step is to form a protective layer with a certain thickness on the surface of the substrate to avoid direct contact between the catalyst layer and the substrate surface, thereby preventing the catalyst from chemically reacting with the substrate when the catalyst is annealed and reduced, so that the distribution density of nanoscale catalyst particles formed after annea...

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Abstract

The invention relates to a method to control carbon nanometer tube growth density. It includes the following steps: first, supplying a foundation base; second, forming a protection layer on the surface of the foundation base; third, forming a catalyst layer on the surface of the protection layer; putting the foundation base into the reaction furnace to taking annealing treatment; finally, adding carbon resource gas to grow carbon nanometer tube. The invention avoids catalyst reacting with foundation base during annealing treatment by the protection layer on the foundation base and ensures the catalyst granule distribution destiny equable. Thus, carbon nanometer tube with equable distribution destiny would be available.

Description

【Technical field】 [0001] The invention relates to a method for controlling the growth density of carbon nanotubes. 【Background technique】 [0002] Carbon nanotube is a new type of carbon material, which was discovered by Japanese researcher Iijima in 1991, see "Helical microtubules of graphitic carbon", S Iijima, Nature, vol.354, p56 (1991). Due to the excellent characteristics of carbon nanotubes, their applications have been widely concerned, especially in the field of electronics. Due to the extremely small diameter of carbon nanotubes, which are only a few nanometers to tens of nanometers, they can be cut from their tips under the action of a small electric field. Emits electrons and thus can be used as a field emission cathode. [0003] In recent years, people have carried out various researches on nanomaterials and their applications, especially on the growth methods of carbon nanotubes and their applications. Methods for growing carbon nanotubes in the prior art inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02C23C16/26C23C14/00
Inventor 张庆州
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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