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Method for preparing transparent, electric film of non-crystalline oxide

An oxide thin film, transparent conductive technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of high valence difference amorphous IMO transparent conductive oxide film, etc., to achieve high carrier Good mobility and process stability

Inactive Publication Date: 2008-09-03
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the research on the preparation of amorphous IMO transparent conductive oxide films with high valence difference at room temperature is a research goal with great application value, and there is no report of this type of research structure.

Method used

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  • Method for preparing transparent, electric film of non-crystalline oxide
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  • Method for preparing transparent, electric film of non-crystalline oxide

Examples

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Embodiment 1

[0033] Example 1. Preparation of molybdenum-doped indium oxide target: In metal with purity of 99.99% is melted into a target, prepared by uniformly and symmetrically embedding 2wt% molybdenum wire with the same purity of 99.99%. The diameter of the target is 51mm and the thickness is 2.5mm. . The substrate is an ordinary glass slide, which is cleaned by ultrasonic waves of pure water, alcohol and acetone for 15 minutes each.

[0034] Substrate temperature: 15°C.

[0035] The distance between the target and the substrate is fixed at 35mm.

[0036] Vacuum the reaction chamber to less than 2×10 before film deposition -3 Pa, and then O 2 And Ar gas are passed into the reaction chamber. The working pressure in the reaction chamber is 2.5×10 -1 Pa, sputtering current is 100mA, sputtering voltage is 400V, control O 2 The percentage of reaction gas P(O 2 )[=PO 2 / (PO 2 +PAr)] is 8.0%. The films are all prepared on ordinary glass plates.

[0037] The sputtering time is 3 minutes, and the ...

Embodiment 2

[0038] In Example 2, an amorphous IMO film was prepared under the same method as Example 1 at a substrate temperature of 25°C under the following conditions: the sputtering current was 150mA, the sputtering voltage was 500V, and the O 2 And Ar gas into O 2 Reaction chamber and control O 2 The percentage of gas partial pressure P(O 2 ) Is 18.0%. The sputtering time is 8 minutes, and the film thickness is 160 nm.

[0039] Measure the thickness d of the film with a surface profiler (Kosaka ET3000 type), and measure the sheet resistance R of the sample with a four-point probe (BD-90 type) □ , So as to calculate the resistivity ρ of the film. At room temperature, a Hall tester (Bio-Rad Microscience HL5500 Hall system) was used to measure the Hall effect of the film to obtain the carrier mobility and carrier concentration of the film. X-ray diffractometer (XRD) (Rigaku D / max-rB type, Cu Kα radiation source) is used to analyze the crystalline structure of the film; the surface of the fil...

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Abstract

A process for preparing the non-crystalline electrically conductive transparent oxide film of indium molybdenum oxide (IMO) film features use of the magnetically controlled reactive DC sputter technology using glass plate as substrate and Mo doped In as target. Said film has high transmission rate and carrier mobility and low resistivity.

Description

Technical field [0001] The invention belongs to the technical field of transparent conductive oxide films, and specifically relates to a method for preparing amorphous molybdenum-doped indium oxide (IMO) transparent conductive oxide films by applying a reactive DC magnetron sputtering method. Background technique [0002] Transparent conductive oxide (TCO) film is a highly degenerate semiconductor material, which is widely used in the field of optoelectronic devices such as flat panel displays and solar cells because of its unique combination of transparency and conductivity. The most representative material is In 2 O 3 :Sn(ITO), SnO 2 :F and ZnO:Al(AZO) thin films. TCO thin film materials generally have a high carrier concentration, and the Fermi level (E F ) Is located at the conduction band energy level (E C ) Above, the resistivity can be as low as 10 -4 Ω·cm; and has a wide forbidden band width (>3eV), so that the film has a high transmittance (>80%) in the visible lig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 张群李喜峰缪维娜黄丽章壮健
Owner FUDAN UNIV
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