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Self gain quanta trap infrared detector in long wave

An infrared detector, quantum well technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that the dark current of the device cannot be significantly reduced, the potential barrier is high, and the detection rate of GaAs/AlGaAs multiple quantum well detectors is not large. Improve and other problems, to achieve the effect of reducing dark current, simplifying device structure, and increasing photocurrent

Active Publication Date: 2008-10-08
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, considering the characteristics of the detection wavelength and detection sensitivity of the device, the potential barrier in the device structure cannot be made very high and thick, otherwise the photocurrent will be strongly suppressed, so the dark current of the device has not been significantly reduced.
Since the noise of the device is proportional to the dark current of the device, the detection rate of the conventional GaAs / AlGaAs multi-quantum well detector has not been greatly improved for many years

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  • Self gain quanta trap infrared detector in long wave
  • Self gain quanta trap infrared detector in long wave
  • Self gain quanta trap infrared detector in long wave

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Embodiment Construction

[0028] Taking a self-gain long-wave quantum well infrared detector with a peak detection wavelength around 15 μm and better implementation parameters as an example, the specific implementation of the present invention will be further described in detail in conjunction with the accompanying drawings.

[0029] See figure 1 , the device of the present invention comprises: a GaAs substrate 1, which is grown layer by layer on the GaAs substrate by molecular beam epitaxy or metal organic chemical vapor phase

[0030] n-type doping (Si: 1.0×10 18 cm -3 ) Al x Ga 1-x As (x=0.14~0.15) emitter layer 2;

[0031] 18-22nm thick non-doped Al x Ga 1-x As (x=0.14~0.15) transition layer 3;

[0032] 5~10nm thick Al x Ga 1-x As (x=0.3~0.4) barrier layer 4;

[0033] 5-10nm thick non-doped Al x Ga 1-x As (x=0.14~0.15) quantum well layer 5;

[0034] 5~10nm thick Al x Ga 1-x As (x=0.3~0.4) barrier layer 6,

[0035] 18-22nm thick non-doped Al x Ga 1-x As (x=0.14~0.15) transition laye...

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Abstract

The device of infrared detector is composed of resonant tunneling structure of dual potential barrier and trap layer of ten periodic multiquantum. Being located at emitter end of device, resonant tunneling structure of dual potential barrier can control injection of carrier effectively so as to reach purposes: reducing dark current of device, lowering noise, and enhancing photocurrent. Comparing with traditional infrared detector of quantum trap in 50 cyclic long waves, the disclosed device simplifies system structure of device.

Description

technical field [0001] The invention relates to a long-wave quantum well infrared detector, in particular to a self-gain long-wave quantum well infrared detector which utilizes a double potential barrier resonant tunneling structure to enhance the photoelectric detection performance of the long-wave quantum well infrared detector. Background technique [0002] In the last decade, with the rapid development of low-dimensional materials, the laboratory research and commercial development of quantum well infrared detectors are very active. Compared with traditional mercury cadmium telluride infrared detectors, quantum well detectors have the advantages of good material uniformity, mature device manufacturing technology, radiation resistance, and low cost. For focal plane array detectors, these advantages are manifested more obvious. However, due to the large dark current and low quantum absorption efficiency and the resulting small photocurrent, quantum well detectors are grea...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/111
Inventor 陆卫熊大元李宁甄红楼张波陈平平李天信陈效双李志锋
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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