Current-controlled complementary metal oxide semiconductor wideband data amplifier circuit
A technology of oxide semiconductors and amplifier circuits, which is applied to amplifiers with semiconductor devices/discharge tubes, amplifiers, improved amplifiers to expand bandwidth, etc., and can solve problems such as increased reflection at the input and reduced bandwidth of the input data amplifier.
Active Publication Date: 2009-03-25
AVAGO TECH INT SALES PTE LTD
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Problems solved by technology
Further, the capacitive loading from the transistors at the input of the data amplifier will short the termination resistors in parallel and reduce the overall impedance at high frequencies, which will result in reduced bandwidth of the input data amplifier and increased reflections at the input
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[0086] Embodiments of the present invention relate to ultra high speed logic circuits applied to silicon complementary metal oxide semiconductor (CMOS) processing technology. A distinction is made here between the terms "CMOS process technology" and "CMOS logic". The CMOS processing technology used here generally refers to various mature CMOS manufacturing processes, which construct field effect transistors on silicon substrates with gate leads, which are usually made of polysilicon material placed on insulating material As made on silica. CMOS logic, on the other hand, refers to the use of complementary CMOS transistors (N-channel and P-channel) to form various logic gates and more complex logic circuits in which zero quiescent current is consumed. Various embodiments of the present invention use the current control mechanism to develop a series of very fast current control CMOS (C3MOS or CMOS 3 MOS TM ) logic, which can be fabricated with various conventional CMOS process...
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Current-controlled CMOS (C3MOS) wideband input data amplifier for reduced differential and common-mode reflection. A novel solution is presented by which better impedance matching and extended bandwidth providing improved gain at higher frequencies may be achieved at the interface between silicon and package and / or circuit board within various integrated circuits that may be employed within communication devices. Appropriately selected impedance allows for a significant reduction in differential and common-mode reflection while also boosting gain at higher frequencies. This novel solution allows for the use of relatively smaller traces and components to still be employed without suffering the deleterious effects of increased reflections when using small traces and components. By allowing the use of these small traces and components, a significant reduction in power consumption and overall device size may be achieved while still providing better reflection and frequency response characteristics.
Description
technical field [0001] The present invention relates to communication devices, and more particularly to the field of amplification applied in said communication devices. Background technique [0002] High-speed broadband data amplifiers are used in broadband data communication equipment. Due to various reasons such as speed limitations of processing technology, power consumption, and other cost-related issues, more efficient techniques need to be developed to increase amplifier bandwidth at high frequency operation. High-speed circuit technologies such as current-controlled CMOS (or C3MOS) logic have been developed to enable significant increases in the speed of circuits fabricated using standard CMOS processing techniques. [0003] However, when the circuit is applied to a silicon substrate or packaged (as in an integrated circuit), there is a gap between the original circuit in the integrated circuit and the bond wires, traces, or pads communicatively connected thereto. ...
Claims
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IPC IPC(8): H03F1/14H03F1/48
CPCH03F1/42H03F2203/45318H03F2203/45512H03F2200/36H03F3/45183H03F2203/45638H03F2203/45554
Inventor 曹军
Owner AVAGO TECH INT SALES PTE LTD