Magnetic recording medium with multiple combination functions and preparation method thereof
A technology of magnetic recording media and composite functions, which is applied in the fields of nanoscience and magnetic material science to achieve the effects of good lubricating performance, enhanced magnetic recording storage density, and high hardness
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Embodiment 1
[0022] Embodiment 1: Selecting the Fe target, Pt target and B with a purity of 99.99% 4 Target C is a sputtering target, and the base distances of the three targets are adjusted to 6.5 cm, 6.1 cm and 6.0 cm, respectively. The background vacuum of the sputtering chamber was evacuated to 2.0×10 -4 Pa, the film is deposited on a cleaned ordinary Si wafer as the substrate. The flow rate of argon gas is controlled by a mass flow meter to be 50 sccm. Before the formal sputtering, the argon gas is used to start the sputtering target. After the glow is stable, adjust the main valve of the sputtering chamber to stabilize the working pressure of the sputtering chamber at 0.5 Pa. Adjust sputtering voltage and sputtering current to make Fe target, Pt target and B 4 C target sputtering power is about 36W, 50W and 75W respectively.
[0023] 1. Rotate the sample stage so that the spare Si sheet on the sample stage is facing the B below it. 4 C target, deposit a 600 second(s) B 4 C botto...
Embodiment 2
[0029] Embodiment 2: The target material, the base distance of the target, the background vacuum of the sputtering chamber, the flow rate of argon gas, the working pressure, and the sputtering power of the three targets are the same as in the embodiment 1.
[0030] 1. Rotate the target stage so that the spare Si sheet on the sample stage is facing the B below it. 4 C target, deposit a 600 second(s) B 4 C bottom layer.
[0031] 2. Rotate the target platform to deposit B 4 The Si sheet at the bottom layer of C is directly opposite to the Fe target below, and a layer of Fe is deposited for 21s.
[0032] 3. Continue to rotate the target platform so that the Si sheet is facing the Pt target below it, and deposit a layer of Pt for 6 seconds.
[0033] 4. Rotate the target stage back, rotate the Si sheet above the Fe target, and deposit a layer of Fe for 21s.
[0034] 5. Rotate the target platform back, and rotate the Si piece to B 4 On top of the C target, deposit a layer of B f...
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