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Method and apparatus for treating a substrate

A substrate surface and equipment technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve problems such as difficult to control the uniformity of processing operations

Inactive Publication Date: 2009-05-20
OTB太阳有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A disadvantage of the method according to the opening paragraph here is that it is difficult to control the uniformity of the processing operation

Method used

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  • Method and apparatus for treating a substrate
  • Method and apparatus for treating a substrate
  • Method and apparatus for treating a substrate

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Embodiment Construction

[0029] 1-3 show an apparatus for treating the surface of a substrate S. As shown in FIG. The device is especially arranged to perform PECVD. The apparatus is provided with a treatment chamber 1 and a substrate holder 2 arranged thereon, on which a substrate S to be treated is placed. A plasma beam source 3 is mounted on the treatment chamber 1 and opposite the surface of the substrate to be treated.

[0030]As shown in FIG. 3 , the plasma radiation source is a cascade radiation source 3 . The radiation source 3 is provided with a cathode 4 in an antechamber 6 and an anode 5 on the side of the radiation source 3 facing the treatment chamber 1 . The antechamber 6 leads to the treatment chamber 1 via a relatively narrow passage 7 . The channel 7 is delimited by the cascaded plates 8 and the anode 5 which are electrically insulated from each other. During use, the treatment chamber 1 is maintained at a relatively low pressure level, in particular below 5000 Pa, and preferably ...

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PUM

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Abstract

A method for treating a surface of at least one substrate, wherein the at least one substrate is placed in a process chamber, wherein the pressure in the process chamber is relatively low, wherein a plasma is generated by at least one plasma source, wherein, during the treatment, at least one plasma source (3) and / or at least one optionally provided treatment fluid supply source is moved relative to the substrate surface. The invention further provides an apparatus for treating a surface of at least one substrate, wherein the apparatus is provided with a process chamber and at least one plasma source, wherein the at least one plasma source (3) and / or at least one optionally provided treatment fluid supply source is movably arranged.

Description

technical field [0001] The invention relates to a method for treating the surface of at least one substrate, wherein the at least one substrate is placed in a treatment chamber; wherein the plasma is generated by at least one plasma source, the at least one plasma source being a cascade jet source; wherein at least one cathode of the cascaded radiation source is disposed in an antechamber which, during use, is dominated by a relatively high pressure compared to the relatively low pressure prevailing in the process chamber; wherein by mutual The antechamber leads to the processing chamber through a relatively narrow channel defined by the electrically insulated cascaded plates, so that during use, the plasma extends into the processing chamber through the relatively narrow channel. Background technique [0002] This method is known from European patent EP-0-295-752. In known methods, the plasma source is mounted on the processing chamber so that the plasma is generated subst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/513H01J37/32C23C16/04
CPCC23C16/04H01J37/32376C23C16/513C23C16/50H01J37/32
Inventor 弗朗西斯库斯·科尔内留斯·丁斯马里纳斯·弗朗西斯库斯·乔哈努斯·埃弗斯迈克尔·阿德里亚努斯·特奥多鲁斯·霍普斯马丁·第纳特·拜克
Owner OTB太阳有限公司