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Photoetching equipment and device manufacturing method

A kind of equipment and lithography projection technology, applied in the direction of micro-lithography exposure equipment, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reflectivity reduction, optical system light reduction, etc.

Inactive Publication Date: 2009-06-03
ASML NETHERLANDS BV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is therefore clear that even a "small" reduction in the reflectance of a single specular surface due to oxidation can cause a significant reduction in the light transmitted through the optical system

Method used

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  • Photoetching equipment and device manufacturing method
  • Photoetching equipment and device manufacturing method
  • Photoetching equipment and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 1 A lithographic projection apparatus according to a specific embodiment of the present invention is schematically shown. The unit includes:

[0049] a radiation system Ex, IL for providing a projection beam PB of radiation (e.g. EUV radiation), which in this particular case also includes a radiation source LA;

[0050] A first target stage (mask stage) MT configured with a mask holder for holding a mask MA (e.g. a reticle) and with a first positioner for precisely positioning the mask relative to the element PL device connection;

[0051] A second target stage (substrate stage) WT configured with a substrate holder for holding a substrate W (e.g., a silicon wafer coated with a protective layer) and connected to a second target stage for precise positioning of the substrate relative to the element PL Two positioning devices are connected.

[0052] A projection system ("lens") PL (eg mirror set) for imaging the radiation portion of mask MA onto a target portio...

Embodiment 2

[0066] image 3 The results of simulated calculation of the theoretical reflectance of the normal incidence optical element according to the second embodiment are shown. The optical element of this second embodiment has the same structure as that of the first embodiment except that the interlayer is composed of C instead of Mo.

[0067]As in the first embodiment, from image 3 It is evident that the second peak of reflectivity occurs when the interlayer thickness is between 6.0 nm and 9.0 nm. The highest reflectance is seen between 6.5 nm and 8.2 nm, especially between 7.0 nm and 7.8 nm. For the Ru capping layer, the optimum reflectivity occurs between 1.6nm and 3.0nm. For a greater thickness of the interlayer, a smaller thickness of the capping layer is desired, for example as little as 1.0 nm. For smaller thickness interlayers composed of C, it is desirable to have a larger Ru capping layer thickness up to about 3.0 nm. Preferably the Ru capping layer has a thickness be...

Embodiment 3

[0069] Figure 4 The results of simulated calculation of the theoretical reflectance of the normal incidence optical element according to the third embodiment of the present invention are shown. The structure of the optical element of the third embodiment of the invention is the same as that of the first embodiment of the invention, except that the interlayer consists of an inner layer of Mo positioned next to the multilayer structure and an outer layer of C positioned next to the Ru cladding layer. Figure 4 The simulation results in correspond to a Mo interlayer thickness of 3.36 nm.

[0070] Figure 4 The results in the figure 2 and 3 The results for the second peak of reflectance are displayed in the same manner as the results for the second peak of reflectance. For a capping layer composed of Ru having a thickness above about 2.0 nm, more preferably above 2.2 nm, and most preferably above about 2.4 nm, the second peak of the reflectance in the third embodiment occurs...

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Abstract

An optical element of a lithographic projection device, comprising a Si / Mo multilayer structure, an outer covering layer, and an interlayer between the multilayer structure and the outer covering layer, wherein the interlayer has a wavelength between 0.3 and 0.7 times the wavelength of the incident light beam thickness of. In a first embodiment, the interlayer consists of a material selected from C and Mo and has a thickness between 6.0 nm and 9.0 nm. In a second embodiment, the interlayer consists of an inner interlayer of Mo next to the multilayer structure and an outer layer of C next to the cover layer. In a second embodiment, the C interlayer is at least 3.4 nm thick and the Ru capping layer is at least 2.0 nm thick.

Description

technical field [0001] The present invention relates to lithographic projection apparatus comprising; [0002] - a radiation system for providing a projected beam of radiation; [0003] - a support structure for supporting the patterning device, which patterns the projection beam according to the desired pattern; [0004] - a substrate platform for holding the substrate; [0005] - a projection system for projecting the patterned light beam onto a target portion of the substrate; and [0006] - at least one optical element on which the projection beam is incident, the optical element having a Si / Mo multilayer structure, an outer covering layer and a An interlayer in between, wherein the interlayer consists of: i) C or Mo, or ii) an inner Mo interlayer adjacent to said multilayer structure and an outer C interlayer adjacent to said cladding layer. Background technique [0007] The term "patterning device" as used herein should be broadly understood as those devices which ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G21K1/06H01L21/027G21K5/00G21K5/02
CPCG21K1/062B82Y10/00Y10T428/30Y10T428/24355G03F7/20
Inventor R·库尔特A·E·I·亚斯欣
Owner ASML NETHERLANDS BV
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