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Substrate processing method and substrate processing apparatus

A substrate processing method and a substrate processing device technology, which are applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of substrate pollution, waste of rinsing time, and increased IPA consumption, and achieve the effect of preventing pattern collapse

Inactive Publication Date: 2009-06-17
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, there is a problem that as the drying process progresses, a liquid-gas interface appears on the substrate, so that the fine patterns approach each other and collapse due to the negative pressure generated in the gap between the patterns.
Therefore, there is a problem that it takes a corresponding amount of rinsing time to remove the treatment liquid (chemical solution or developer) and useless substances adhering to the surface of the substrate, and the consumption of IPA also increases.
[0015] Furthermore, foreign matter particles may be contained in IPA to some extent, so the following problem may occur: as described above, if the supply amount of IPA supplied to the substrate increases, the foreign matter particles contained in the IPA will accumulate on the substrate, causing the substrate to anti-pollution
As a result, the collapse of the pattern and the occurrence of watermarks during drying of the substrate cannot be sufficiently prevented

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

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Experimental program
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Effect test

no. 1 approach

[0062] Fig. 4 is a diagram showing a first embodiment of the substrate processing apparatus of the present invention. In addition, Figure 5 It is a block diagram showing the control structure of the substrate processing apparatus of FIG. 4. This substrate processing apparatus is a single-wafer type substrate processing apparatus used for cleaning processing, wherein the cleaning processing described above is for removing contaminants adhering to the surface Wf of a substrate W such as a semiconductor wafer. Specifically, this is a device in which the surface Wf of the substrate W on which the fine pattern of Poly-Si is formed on the surface Wf is subjected to a chemical liquid treatment using a chemical liquid such as hydrofluoric acid, and pure water or After the rinsing process of the rinsing liquid such as DIW, a replacement process described later is performed on the substrate W wetted by the rinsing liquid, and then the substrate W is dried.

[0063] This substrate processin...

no. 2 approach

[0101] Fig. 10 is a diagram showing a second embodiment of the substrate processing apparatus of the present invention. In addition, Picture 11 It is a block diagram showing the control structure of the substrate processing apparatus of FIG. 10. A major difference between the substrate processing apparatus of the second embodiment and the first embodiment is that a blocking member 9 that functions as the “environmental blocking device” of the present invention is provided at a position above the spin chuck 1. In addition, since other structures and operations are basically the same as those of the first embodiment, the same reference numerals are attached here, and the description thereof is omitted.

[0102]The blocking member 9 is a disk-shaped member having an opening in the center, and is located above the spin chuck 1. The lower surface (bottom surface) of the blocking member 9 is formed as an opposing surface approximately parallel to the substrate surface Wf, and its plana...

no. 3 approach

[0111] Figure 12A , Figure 12B , Figure 12C It is a figure which shows the 3rd Embodiment of the substrate processing apparatus of this invention. The major difference between the substrate processing apparatus of the third embodiment and the first and second embodiments is that the pre-drying treatment step is performed after the replacement step and before the drying step. In addition, since the other structures and operations are basically the same as those of the second embodiment, the same reference numerals are attached here, and the description thereof will be omitted.

[0112] In this embodiment, after the replacement with the mixed solution (replacement step) and before drying the substrate W (drying step), the following pre-drying treatment step is performed. First, the mixed liquid is supplied to the substrate surface Wf, thereby forming a liquid-immersed mixed liquid layer 21 ( Figure 12A ). Next, nitrogen gas is ejected from the gas ejection nozzle 8 toward the c...

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Abstract

After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below. Hence, it is possible to effectively prevent destruction of the patterns while suppressing the consumption amount .

Description

Technical field [0001] The present invention relates to a substrate processing method and a substrate processing apparatus for drying the surface of a substrate wetted by a liquid. In addition, the substrate to be the target of the drying process includes a semiconductor wafer, a glass substrate for a photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for optical discs, and the like. Background technique [0002] After the chemical solution treatment with a chemical solution and the rinsing treatment with a rinse solution such as pure water are completed, in order to remove the rinse solution adhering to the surface of the substrate, many drying methods have been proposed from the past. As one of these methods, a drying method using organic solvent components such as IPA (IsoPropyl Alcohol) is known. In particular, for single-sheet substrate processing apparatuses, there is known a so-called Rotagoni drying that combines a d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/30H01L21/67H01L21/027G03F7/30
Inventor 宫胜彦泉昭
Owner DAINIPPON SCREEN MTG CO LTD