Method for adjusting the threshold voltage of a memory cell and chalcogenide material

A critical voltage, chalcogenide technology, used in circuits, electrical components, electrical solid devices, etc., to achieve the effect of extensive use value

Inactive Publication Date: 2009-06-24
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to solve the defects in the existing methods of adjusting the critical voltage of memory cells and chalcogenide materials, relevant manufacturers have tried thei

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  • Method for adjusting the threshold voltage of a memory cell and chalcogenide material
  • Method for adjusting the threshold voltage of a memory cell and chalcogenide material
  • Method for adjusting the threshold voltage of a memory cell and chalcogenide material

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Embodiment Construction

[0046] The specific method, steps, features and effects of the method for adjusting the threshold voltage of memory cells according to the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0047] Several exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0048] According to the present invention, the threshold voltage Vth of a material whose Vth is variable can be adjusted by applying energy to the material. As an example, materials with variable Vth include chalcogenide materials, especially amorphous chalcogenide materials and other semiconductor materials, such as amorphous silicon. The term "chalcogenide material" used here refers to at least one element including Group 16 (formerly Group VI) of the periodic table of elements, ie O, S, Se, Te, Po. Exemplary chalcogenides are set forth in US Patent No. 5,177,567 and the lis...

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Abstract

The present invention relates to a method for adjusting the threshold voltage of a memory cell and a chalcogenide material, wherein energy is applied to a film made of a material capable of changing the threshold voltage. By way of example, the thin film may be composed of a chalcogenide material. It can be applied in the form of electrical pulses (voltage pulses or current pulses), optical pulses (laser pulses), thermal pulses, microwave pulses. The energy pulses may be of a predetermined size, have a predetermined shape, and be applied for a predetermined duration to vary the threshold voltage. The present invention also describes a method of tuning the threshold voltage of a chalcogenide material. In this method, energy is applied to the chalcogenide material. The present invention can be used in the application of a large number of memory/solid-state devices, and it can quickly adjust Vth, so it is more suitable for practical use.

Description

technical field [0001] The invention relates to a memory device, in particular to a method for adjusting the critical voltage of a memory unit and a chalcogenide material. [0002] This application is related to the following application: [0003] (1) U.S. patent application (attorney filing number MXICP021), an urgent application submitted on the same day, the invention name is "Transistor-Free Random Access Memory"; [0004] (2), U.S. patent application (attorney filing number MXICP022), an urgent application submitted on the same day, the title of the invention is "Multi-Level Memory Device and Its Program Design and Reading Method (Multi-Level Memory Device and Method for Programming and Reading the Same)". [0005] The contents of the above-mentioned related applications are all incorporated into the present application. Background technique [0006] Chalcogenide memory cells are non-volatile and can change phase fairly quickly. Therefore, such memories are expected...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C11/56G11C13/00H01L21/70H01L27/105
CPCH01L45/1641H01L45/04H01L45/141H01L45/06H01L45/148H01L45/1233H10N70/231H10N70/882H10N70/826H10N70/884H10N70/041
Inventor 陈逸舟卢志远
Owner MACRONIX INT CO LTD
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