Preparation method of heat radiator

Abstract

The invention provides a method for preparing a heat sink, which includes the steps of: providing a heat sink base, the heat sink base has a surface; performing passivation treatment on the heat sink base, so as to form a heat sink on the surface of the heat sink base A passivation layer; remove the passivation layer on the surface in an oxygen-free environment; form a catalyst layer on the surface in an oxygen-free environment; grow carbon nanotubes on the catalyst layer by chemical vapor deposition, and then obtain A cooling device. The present invention passesivates the substrate of the heat sink, removes the passivation layer on one surface of the heat sink in an oxygen-free environment, and forms a catalyst layer on the surface to grow carbon nanotubes, which can effectively prevent the surface from being Oxidation forms an oxide layer with poor thermal conductivity, so that the carbon nanotubes have better thermal contact with the substrate of the heat sink, and the contact thermal resistance is small, so that the prepared heat sink has better heat dissipation efficiency.

Description

【Technical field】 [0001] The invention relates to a preparation method of a heat dissipation device, in particular to a preparation method of a heat dissipation device using carbon nanotubes. 【Background technique】 [0002] With the rapid development of the information industry, the data processing capability of the heating elements (such as CPU, etc.) disposed inside the electronic device is getting stronger and stronger. However, with the improvement of the computing speed of the heating element, the heat generated by it also increases significantly. In order to quickly discharge the generated heat so that the heating element can operate at normal operating temperature to ensure the quality of data processing, storage and transmission, a heat dissipation device is usually installed on the surface of the heating element, and the base of the heat dissipation device is mostly used Made of copper or aluminum (the thermal conductivity of copper is 402W / mK, and the thermal cond...

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Problems solved by technology

However, since the substrate of the heat sink is easily oxidized, the substrate of the heat sink will inevitably be exposed to the air before growing the carbon nanotubes, which will form an oxide layer with poor thermal conductivity on the growth surface of the carbon nanotubes. The contact thermal resistance of the layer is relatively large, which makes the thermal contact between the grown carbon nanotubes and the substrate of the heat sink poor, which is not conducive to the transfer of heat, and thus makes the heat dissipation efficiency of this heat sink low.

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