Checkout and optimizing method for etch technological condition

Abstract

The invention discloses a method for inspecting etching process conditions, comprising the steps of: providing a first substrate and a second substrate; depositing a stop layer on the first substrate; depositing a material layer with a first thickness on the stop layer; depositing a material layer with a second thickness on the second substrate, and the first thickness is not greater than the second thickness; on the first substrate Define etching patterns on the material layers of the bottom and the second substrate respectively; etch the material layers on the first substrate and the second substrate; detect the results of the etching; according to the results It is judged whether the process conditions of the etching meet the requirements. By using the inspection method of the present invention, it can be inspected whether the etching process conditions used can have a certain process window, so as to ensure the consistency of the etching process. The present invention also provides a method for optimizing the etching process conditions, which can adjust and optimize the etching process conditions according to the detection results.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for testing and optimizing etching process conditions. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller. The impact of various effects caused by the high density and small size of devices on the production results of semiconductor processes has become increasingly prominent. , the process requirements are more stringent. At this time, the deviation of the previous process has a more serious impact on the subsequent process. [0003] Taking the etching process as an example, when there is inconsistency in the material layer deposition process performed before it, for example, it may occur between batches, between different substrates in the same batch, or even between different positions on ...

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Problems solved by technology

At this time, the deviation of the previous process has a more serious impact on the subsequent process

[0003] Taking the etching process as an example, when there is inconsistency in the material layer deposition process performed before it, for example, it may occur between batches, between different substrates in the same batch, or even between different positions on the same substrate. During this period, the thickness of the deposited material layer may be different. At this time, the etched pattern after etching may also have inconsistent problems: where the material layer is thinner, over-etching occurs; when the material layer is thicker At the place, there is a phenomenon that the etching is not in place

[0010] 1. With the gradual reduction of device size, it is difficult to accurately measure the actual etching depth by instruments such as a step meter when performing an etching rate test of an etching pattern with a large aspect ratio;

[0011] 2. For the etching process, whether the thickness of the stop layer is suitable is a key issue, and its setting should actually be an adjustable part of the etching process conditions. However, the existing etching process tests have failed to make the stop layer The thickness setting is considered in combination with other conditions of the etching process, and the optimization of the etching process conditions is not comprehensive

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