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Method for reactive sputter deposition of an ultra-thin metal oxide film

A sputter deposition, oxide film technology, applied in sputter coating, metal material coating process, manufacturing/processing of electromagnetic devices, etc., can solve problems such as MTJ performance degradation

Inactive Publication Date: 2009-09-30
HITACHI GLOBAL STORAGE TECH NETHERLANDS BV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In both under-oxidation and over-oxidation conditions, the MTJ performance will be severely degraded

Method used

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  • Method for reactive sputter deposition of an ultra-thin metal oxide film
  • Method for reactive sputter deposition of an ultra-thin metal oxide film
  • Method for reactive sputter deposition of an ultra-thin metal oxide film

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Embodiment Construction

[0024]

[0025] The method of the present invention can be applied to the formation of the tunnel barrier required by the MTJ read head. However, this method is fully applicable to the formation of tunnel barriers for other MTJ devices and the formation of ultra-thin (less than about 100 ) More general applications of metal oxide films.

[0026] Since the MTJ read head has applications in magnetic recording disk drives, reference will be made to Figure 1-3 Briefly describe the operation of a conventional hard disk drive (HDD). figure 1 It is a simplified diagram of a conventional magnetic recording hard disk drive 10. The disk drive 10 includes a magnetic recording disk 12 and a rotating voice coil motor (VCM) actuator 14 supported on a disk drive housing or base 16. The disk 12 has a center of rotation 13 and is rotated in a direction 15 by a spindle motor mounted to the base 16. The actuator 14 rotates around a shaft 17 and includes a rigid actuator arm 18. The suspension 20, ...

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Abstract

The invention is a method for depositing the ultra-thin film reactive sputtering of the oxide of the first metal on the film of the second metal. The method may be part of fabricating a magnetic tunnel junction (MTJ) with a metal oxide film that becomes the tunnel barrier of the MTJ. The metal oxide film reacts in the presence of oxygen (O 2 ) gas is deposited by reactive sputtering from a target consisting essentially of the first metal, which sputtering takes place in a "high voltage" state to ensure that the deposition occurs while the target is in metallization mode, ie with no or minimal oxidation. When the metal oxide film is used for the MTJ tunnel barrier, the target is made of one metal in Al, Ti, Ta, Y, Ga or In, an alloy of two or more of these metals, or one of these metals more than one alloy with Mg; and the film of the second metal is an iron-containing film, usually a film of Fe or a CoFe alloy.

Description

Technical field [0001] The present invention generally relates to a method for depositing an ultra-thin metal oxide film on a film of a metal different from the metal in the metal oxide film. Background technique [0002] Ultra-thin metal oxide films are used in nanotechnology devices. When the film on which the metal oxide film is to be deposited is also a metal but the metal is different from the metal in the metal oxide, these films are deposited to an ultra-thin thickness such as less than about 100 Is particularly difficult. In addition, there are applications where it is important that the oxidation of the underlying metal is minimized while being able to deposit a metal oxide film. [0003] One application of these ultra-thin metal oxide films is as a capping layer in giant magnetoresistance (GMR) sensors, which are widely used as magnetoresistive read heads in magnetic recording disk drives. It has been suggested to use e.g. TaO x Or AlO x Of non-magnetic metal oxide to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/00C23C14/34C23C8/10G11B5/00
CPCG11B5/39C23C14/081H01L43/12C23C14/0089C23C14/0042G11B5/127H10N50/01
Inventor 丹尼尔·莫里
Owner HITACHI GLOBAL STORAGE TECH NETHERLANDS BV
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