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Method for implementing cobalt doping in zinc oxide nano pole
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A zinc oxide nanotechnology, directly above the technology, applied in the quasi-one-dimensional nanomaterials and nanometer fields, can solve the problems of high operating level requirements, complex process conditions, expensive equipment, etc., to simplify the operation process, high purity, and reduce experimental costs. Effect
Inactive Publication Date: 2009-10-28
UNIV OF SCI & TECH BEIJING
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However, the existing preparation method has expensive equipment, complex process conditions and high operating level requirements
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Embodiment 1
[0020] 1) Combine Zn and CoCl 2 Adjacently placed in a porcelain boat as an evaporation source, with a single crystal silicon wafer as a receiving substrate placed directly above the evaporation source 4mm.
[0021] 2) Put the porcelain boat in the tube furnace, fill it with 100ml / min of argon gas, keep the flow rate of argon gas at 55ml / min after 7 minutes, and keep the system pressure at atmospheric pressure.
[0022] 3) Heat the tube furnace to 800°C and keep it warm for 120min. When the temperature reaches 800°C, let in 5ml / min of air for 20min, and then close the air valve.
[0023] 4) When the temperature of the tube furnace was cooled to room temperature with the furnace, the sample was taken out, and the green deposits on the surface of the silicon wafer were Co-doped ZnO nanocolumns.
Embodiment 2
[0025] 1) Combine Zn and CoCl 2 Adjacently placed in a ceramic boat as an evaporation source, with a single crystal silicon wafer as a receiving substrate placed directly above the evaporation source 5mm away.
[0026] 2) Put the porcelain boat in the tube furnace, fill it with 150ml / min of argon gas, keep the flow rate of argon gas at 60ml / min after 6 minutes, and keep the system pressure at atmospheric pressure.
[0027] 3) Heat the tube furnace to 810°C and keep it warm for 100min. When the temperature reaches 810°C, let in 8ml / min of air for 15min, and then close the air valve.
[0028] 4) When the temperature of the tube furnace was cooled to room temperature with the furnace, the sample was taken out, and the green deposits on the surface of the silicon wafer were Co-doped ZnO nanocolumns.
Embodiment 3
[0030] 1) Combine Zn and CoCl 2 Adjacently placed in a ceramic boat as an evaporation source, with a single crystal silicon wafer as a receiving substrate placed directly above the evaporation source 6mm.
[0031] 2) Place the porcelain boat in the tube furnace, fill it with 200ml / min of argon gas, keep the flow rate of argon gas at 55ml / min after 5 minutes, and keep the system pressure at atmospheric pressure.
[0032] 3) Heat the tube furnace to 820°C and keep it warm for 80min. When the temperature reaches 820°C, let in 10ml / min of air for 10min, and then close the air valve.
[0033] 4) When the temperature of the tube furnace was cooled to room temperature with the furnace, the sample was taken out, and the green deposits on the surface of the silicon wafer were Co-doped ZnO nanocolumns.
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Abstract
The invention discloses a method for realizing cobalt doping in zinc oxide nanocolumns, which belongs to the field of quasi-one-dimensional nanomaterials and nanotechnology. The process is as follows: place Zn and CoCl2 adjacently in a porcelain boat as the evaporation source, use a single crystal silicon wafer as the receiving substrate and place it directly above the evaporation source at a distance of 4-6 mm; place the porcelain boat in a tube furnace, fill Inject 100-200ml / min of argon, and keep the flow rate of argon at 55-60ml / min after 5-7min, and the system pressure is at atmospheric pressure; heat the tube furnace to 800-820°C and keep it warm for 80-120min, when When the temperature reaches the set temperature, let in 5-10ml / min of air for 10-20min, then close the air valve; cool to room temperature with the furnace, take out the sample, the green deposits on the surface of the silicon wafer are Co-doped ZnO nanocolumns . The advantage is that the obtained Zn1-xCoxO nanocolumns have high purity, high yield, and room temperature ferromagnetism, which provides a material basis for the practical application of spintronic devices.
Description
technical field [0001] The invention belongs to the field of quasi-one-dimensional nanomaterials and nanotechnology, and particularly relates to a method for realizing cobalt doping in zinc oxide nanocolumns, and realizing magnetic element cobalt doping in zinc oxide nanomaterials. Background technique [0002] Zinc oxide (ZnO), a wide-bandgap semiconductor, has excellent piezoelectric, photoelectric, and gas-sensitive properties, and is mainly used in light-emitting elements, optical waveguide devices, field emission display devices, surface acoustic wave elements, and low-voltage varistor devices. Doping in semiconductor materials can effectively improve the performance of the material itself. At present, ZnO formed by doping Co ions in ZnO 1-x co x O dilute magnetic semiconductors have become a research hotspot due to their good room temperature ferromagnetic properties. There have been experimental works to prepare room temperature ferromagnetic Zn 1-x co x O, such a...
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