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Method for making tin solder bump

A technology for solder bumps and fabrication methods, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as the influence of shear force test results, and the reliability of solder bumps and semiconductor devices. Improve process tolerance, bump firmness, and high productivity

Inactive Publication Date: 2009-11-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This negatively impacts the results of the shear test on the solder bumps
Degrades the reliability of solder bumps and semiconductor devices

Method used

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  • Method for making tin solder bump
  • Method for making tin solder bump
  • Method for making tin solder bump

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0058] The method for making tin-lead solder bumps on a 12" silicon wafer according to the present invention is taken as an example for illustration.

[0059] FIG. 1 is a cross-sectional view showing the process of forming solder bumps on a silicon wafer on which pads have been formed.

[0060] Such as Figure 1A As shown, on the silicon wafer 1 on which the pads have been formed, an UBM copper layer is formed by sputtering, with a thickness of 5 μm.

[0061] Such as figure 2 As shown, with a rolling machine 15, usually with a pressure of 0.2-0.5mPa, a temperature of 80-100°C, and a speed of 0.5-1.5m / min, the dry film photoresist layer with a thickness of 100-140μm is rolled onto the silicon on wafer 3. The adhesion between the dry film photoresist and the UBM layer mainly depends on the rolling pressure. Generally, the higher the rolling pressure, the better the adhesion between the UBM layer and the dry film photoresist. If light copper foot plating is desired and the d...

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Abstract

The invention relates to a manufacturing method which can control the bump of an undercut. The method comprises the following steps: an underbump metal layer is formed on a wafer on which a bonding pad has already formed; a dry film photoresist layer is formed; a bump opening pattern of photoresist is formed through exposure and development; a copper layer and a nickel layer are electroplated in the opening, and bump material is filled into the opening; the photoresist is removed; the bump is taken as a mask to etch the underbumpmetal ; high-temperature reflowing is performed. The method can be used for a 12 wafer, improves the manufacturing process permissibility of the metal etching underbump metal, and is easier to control the undercut of the bump, and the obtained bump is more solid .

Description

technical field [0001] The invention relates to a method for manufacturing solder bumps in the semiconductor manufacturing process, in particular to a method for manufacturing solder bumps that can control undercut. Background technique [0002] Although flip-chip technology has been around for 30 years, it has only started to be mass-produced in recent years. Advances in substrate technology and material technology development have accelerated the adoption of advanced packaging technologies. As end-customer packaging requirements for more complex and more functional devices continue to grow rapidly, there is a need for more complex and more functional device packaging. The earliest advanced packaging technology was the application of wafer bumping, which is the application of solder to wafer-level devices in the form of bumps or balls. [0003] Wafer bumps have replaced wire connections as the interconnect of choice for increasing component counts. Wafer bumping applicat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L2224/11912H01L2224/11849H01L2224/1147H01L24/11H01L2224/94H01L2224/11H01L2924/01322H01L2924/00H01L2924/00012
Inventor 蒋瑞华何智清陈圣琰陈杰王重阳章剑名孙支柱
Owner SEMICON MFG INT (SHANGHAI) CORP