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Backside-illuminated photodetector

A technology of back-incidence and light detection, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of detected light scattering, reduce the sensitivity of back-incidence photodiodes, etc., and achieve the effect of suppressing scattering and sufficiently small

Inactive Publication Date: 2009-12-30
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the resin of the thinned part of the back-illuminated photodiode (that is, the incident part of the light to be detected) is damaged, the light to be detected will be scattered due to the damage.
When the detected light is scattered, the sensitivity of the back-illuminated photodiode will also be reduced.

Method used

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  • Backside-illuminated photodetector

Examples

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Embodiment Construction

[0045] Hereinafter, preferred embodiments of the drawings and the back-illuminated photodetection element of the present invention will be described in detail. However, in the description of the drawings, the same elements are assigned the same symbols, and repeated descriptions are omitted. In addition, the dimensional ratios in the drawings do not necessarily match those in the description.

[0046] figure 1 It is a cross-sectional view showing the first embodiment of the back-illuminated photodetection element of the present invention. In the back-illuminated photodiode 1 , light to be detected is incident from the back side, a carrier wave is generated by the incident light to be detected, and the generated carrier wave is output from the front side as a detection signal. The back-illuminated photodiode 1 includes: an N-type semiconductor substrate 10, a P + type impurity semiconductor region 11 , recess 12 , and cover layer 13 . As the N-type semiconductor substrate ...

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PUM

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Abstract

A backside-illuminated photodetector is disclosed which enables to sufficiently reduce the package size and is capable to suppress scattering of light to be detected. A backside-illuminated photodiode (1) comprises an N-type semiconductor substrate (10), a P<+>-type impurity semiconductor region (11), a recessed portion (12), and a coating layer (13). The P<+>-type impurity semiconductor region (11) is formed in a surface layer on the front side (S1) of the N-type semiconductor substrate (10). The recessed portion (12), on which a light to be detected is incident, is formed in a region on the backside (S2) of the N-type semiconductor substrate (10) which region is opposite to the P<+>-type impurity semiconductor region (11). The backside (S2) is also provided with the coating layer (13) which transmits the light to be detected to the recessed portion (12). A portion of the coating layer (13) formed on the recessed portion (12) is dented when compared with the other portion formed on a peripheral portion (14) surrounding the recessed portion (12).

Description

technical field [0001] The present invention relates to a back-illuminated photodetection element. Background technique [0002] Figure 24 In the shown conventional back-illuminated photodiode 100, P + type high concentration impurity semiconductor region 102, and N + type high-concentration impurity semiconductor region 103 . at P + type high concentration impurity semiconductor region 102 and N + An anode electrode 104 and a cathode electrode 105 are respectively connected to the high-concentration impurity semiconductor region 103 . A bump electrode 106 made of solder is formed on both electrodes 104 and 105 . In addition, the N-type silicon substrate 101 corresponds to the P + A part of the high-concentration impurity semiconductor region 102 is thinned from the back side. The thinned portion forms an incident portion of the light to be detected. [0003] Such as Figure 24 As shown, the back-illuminated photodiode 100 is mounted in a ceramic package 107 by flip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/10H01L27/14H01L27/146H01L31/0203H01L31/0216
CPCH01L27/1464H01L27/14618H01L31/02161H01L27/14627H01L27/14683H01L27/14643H01L31/0203H01L27/14685H01L2224/13H01L2924/19107H01L2224/05024H01L2224/05008H01L2224/05568H01L2224/05001H01L2224/05647H01L2924/00014H01L2224/02379H01L2224/05099H01L31/10
Inventor 柴山胜己
Owner HAMAMATSU PHOTONICS KK