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Electronic component

A technology of electronic components and passive components, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of not being able to maintain the static capacitance of capacitors, increasing the thickness of dielectric films, etc.

Inactive Publication Date: 2010-03-17
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the thickness of the dielectric film 92c requires increasing the area of ​​the electrode film 92b, because otherwise, the static capacitance of the capacitor 92 cannot be maintained.
Therefore, increasing the thickness of the dielectric film 92c is not advisable from the standpoint of suppressing the increase in size of the capacitor 92 and thus the IPD 90.

Method used

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  • Electronic component
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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0050] Fabricate capacitor elements with Figure 4 Structural features of capacitor 10A and its vicinity are shown. Specifically, the substrate S is made of quartz. The electrode film 11 has a multilayer structure consisting of a Ti film (50 nm thick) provided on the substrate S, an Au film (500 nm thick) on the Ti film, a Ni film (50 nm thick) on the Au film, and Another Au film (500nm thick) on the Ni film. The electrode film 12 is a plated Cu film (2 μm thick). The dielectric film 13 is SiO 2 Film (220 nm thick). The wiring 40 including the bonding portion 41 has a multilayer structure composed of a plated Ni film (10 μm thick) closer to the capacitor 10 and a plated Ai film (2 μm thick) formed on the Ni film.

example 2

[0052] The capacitor element of Working Example 2 was fabricated to have the same structure as the above-described capacitor element (Working Example 1), except that the Cu-plated electrode film 12 had a thickness of 4 μm instead of 2 μm.

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PUM

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Abstract

An electronic component includes a substrate, a capacitor, and a wiring. The capacitor has a multilayer structure including a first electrode film provided on the substrate, a second electrode film of2 to 4 mum in thickness disposed to face the first electrode film, and a dielectric film interposed between the first and the second electrode film. The wiring includes a joint portion connected to the second electrode film, on the opposite side of the dielectric film.

Description

technical field [0001] The invention relates to an electronic component comprising a capacitor arranged on a substrate, for example formed by semiconductor processing techniques. Background technique [0002] In a radio frequency (RF) system such as a mobile phone or a wireless LAN, signals are subjected to phase matching processing for satisfactory transmission between functional devices constituting the system. Accordingly, the input / output (I / O) terminals of each device are provided with passive elements, including passive elements such as inductors or capacitors, and used as phase shifters for controlling the phase of signals. [0003] In RF systems, SAW filters are used as narrowband frequency filters. In the manufacturing process of a device incorporating a SAW filter, when a physical shock or thermal effect is applied to the SAW filter or its piezoelectric elements, the SAW filter including the piezoelectric There is a potential difference between them. In this cas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/30H01G4/40H03H7/00
CPCH01G4/252H01G4/33H01L28/60H03H1/0007H01L27/04
Inventor 松本刚水野义博宓晓宇奥田久雄上田知史
Owner FUJITSU LTD